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Volumn 83, Issue 3, 2011, Pages

Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

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Indexed keywords


EID: 79551647386     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.035321     Document Type: Article
Times cited : (64)

References (16)
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    • Bias voltage dependence of tunneling anisotropic magnetoresistance in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers
    • DOI 10.1103/PhysRevLett.99.226602
    • L. Gao, X. Jiang, S.-H. Yang, J. D. Burton, E. Y. Tsymbal, and S. S. P. Parkin, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.99.226602 99, 226602 (2007). (Pubitemid 350176089)
    • (2007) Physical Review Letters , vol.99 , Issue.22 , pp. 226602
    • Gao, L.1    Jiang, X.2    Yang, S.-H.3    Burton, J.D.4    Tsymbal, E.Y.5    Parkin, S.S.P.6
  • 11
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    • PLRBAQ 1098-0121 10.1103/PhysRevB.49.11452
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    • APPLAB 0003-6951 10.1063/1.3003878
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    • Khmelevskyi, S.1    Mohn, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.