Room-temperature antiferromagnetic memory resistor

Nature Materials

Volumn 13, Issue 4, 2014, Pages 367-374

  Marti, X ^a,b,c   Fina, I ^d,e   Frontera, C ^d   Liu, Jian ^f   Wadley, P ^c,g   He, Q ^f   Paull, R J ^a   Clarkson, J D ^a   Kudrnovsky J ^c   Turek, I ^b,h   Kunes J ^c   Yi, D ^f   Chu, J H ^f   Nelson, C T ^f   You, L ⁱ   Arenholz, E ^f   Salahuddin, S ⁱ   Fontcuberta, J ^d   Jungwirth, T ^c,g   Ramesh, R ^a,f  

^a University of California Berkeley   (United States)

^b CHARLES UNIVERSITY   (Czech Republic)

^c INSTITUTE OF PHYSICS   (Czech Republic)

^d INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^e MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^f LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^g UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^h INSTITUTE OF PHYSICS OF MATERIALS   (Czech Republic)

ⁱ UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETISM; FERROMAGNETISM; LANTHANUM COMPOUNDS; MAGNETIC FIELDS; MAGNETIC STORAGE; MAGNETOELECTRONICS; MAGNETS;

ANISOTROPIC MAGNETORESISTANCE; ANTIFERROMAGNETICS; APPLIED MAGNETIC FIELDS; FERROMAGNETIC STATE; HIGH DENSITY MEMORY; MAGNETIC FIELD PERTURBATIONS; MAGNETIC RANDOM ACCESS MEMORY; STRONG MAGNETIC FIELDS;

FERROMAGNETIC MATERIALS;

EID: 84897040058     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat3861     Document Type: Article

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