Spin gating electrical current

Applied Physics Letters

Volumn 101, Issue 12, 2012, Pages

  Ciccarelli, C ^a   Zarbo L P ^b   Irvine, A C ^a   Campion, R P ^c   Gallagher, B L ^c   Wunderlich, J ^b,d   Jungwirth, T ^b,c   Ferguson, A J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVELY COUPLED; CHEMICAL-POTENTIAL SHIFT; COULOMB BLOCKADE OSCILLATION; ELECTRICAL CURRENT; ELECTRICAL DEVICES; FERROMAGNETIC SEMICONDUCTOR; FUNDAMENTAL PARAMETERS; GATE ELECTRODES; MAGNETIC ORDER PARAMETER; NONMAGNETICS; PHYSICAL SYSTEMS; SINGLE ELECTRON; SPIN MANIPULATION; SPIN TRANSISTOR;

ALUMINUM; CHEMICAL POTENTIAL; ELECTRONIC STRUCTURE; GALLIUM; MANGANESE;

ELECTRIC PROPERTIES;

EID: 84866876172     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4752013     Document Type: Article

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