SCOPUS 정보 검색 플랫폼

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 496-499

Improvement of flicker noise in lateral asymmetric channel N-MOSFETs for sub-micron analog applications

(3) Deshpande, H V a Cheng, B b Woo, J C S a

a UNIVERSITY OF CALIFORNIA (United States)

b MOTOROLA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SOLID STATE DEVICES; SPURIOUS SIGNAL NOISE;

ANALOG APPLICATIONS; CURRENT DRIVES; DEEP-SUBMICRON CHANNELS; ELECTRON VELOCITY; FLICKER NOISE; INVERSION CHARGE; LATERAL ASYMMETRIC CHANNEL; LOWER NOISE;

MOSFET DEVICES;

EID: 84907844008 PISSN: 19308876 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/ESSDERC.2000.194823 Document Type: Conference Paper

Times cited : (3)

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