2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 360-363

  Dachs, C J J ^a   Verheijen, M A ^a   Kaiser, M ^a   Stolk, P A ^a   Ponomarev, Y V ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; SOLID STATE DEVICES;

CHANNEL DOPINGS; CONCENTRATION GRADIENTS; DOPANT PROFILING; PREFERENTIAL ETCHING; PROCESS SIMULATIONS; QUANTITATIVE DETERMINATIONS; RATE DEPENDENCE; SELECTIVE ETCHING;

CMOS INTEGRATED CIRCUITS;

EID: 84907819581     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194789     Document Type: Conference Paper

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