RF analysis of aggressively scaled pHEMTs

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 156-159

  Kalna, K ^a   Roy, S ^a   Asenov, A ^a   Elgaid, K ^a   Thayne, I ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SOLID STATE DEVICES;

GATE LENGTH; PARASITICS; PSEUDO-MORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; RF PERFORMANCE; SCALED DEVICES; STEADY STATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84907815610     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194738     Document Type: Conference Paper

References (7)

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