High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Volumn , Issue , 2001, Pages 482-485

  Aniel, F ^a   Enciso Aguilar, M ^a   Giguerre, L ^a   Crozat, P ^a   Adde, R ^a   Mack, T ^b   Seiler, U ^b   Hackbarth, Th ^b   Raynor, B ^c  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b DAIMLER AG   (Germany)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; RECONFIGURABLE HARDWARE; SEMICONDUCTOR DEVICES;

2.5 GHZ; DEVICE OPTIMIZATION; GATE LENGTH; LOW NOISE FIGURE; MAIN PARAMETERS; PHYSICAL SIMULATION; SI/SIGE; STRAINED-SI;

NOISE FIGURE;

EID: 0012746304     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2001.984551     Document Type: Conference Paper

References (4)

1. T. Hackbarth, G. Höck, H.-J. Herzog, and M. Zeuner, "Strain relieved SiGe buffers for Si-based heterostructure field effect transistors," Journal of Crystal Growth, vol. 201/202, pp. 734-738, 1999.
2. T n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD," Electron. Lett., vol. 35, no. 1, pp. 86-87, 1999.
3. F. Aniel, N. Zerounian, R. Adde, M. Zeuner, T. Hackbarth, U. König "Low temperature analysis of 0.25 μm T-Gate SiGe n-MODFET" IEEE Transaction on Electron Device, Vol. 47, no7, July 2000, pp. 1477-83
4. 0.42 n-MODFETs", Electron. Lett., 2001, in press.Figures :