메뉴 건너뛰기




Volumn 75, Issue , 2014, Pages 477-484

Atomic Layer Deposition of zinc oxide for solar cell applications

Author keywords

ALD; Atomic Layer Deposition; Photovoltaic; Resistivity; Solar cells; X rays diffraction; ZnO

Indexed keywords

ELECTRIC CONDUCTIVITY; SOLAR CELLS;

EID: 84907507801     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2014.07.050     Document Type: Article
Times cited : (30)

References (15)
  • 1
    • 0032593271 scopus 로고    scopus 로고
    • 2 heterojunction solar cells - Recent achievements, current understanding, and future challenges
    • 2 heterojunction solar cells - recent achievements, current understanding, and future challenges Appl. Phys. A 69 1999 131
    • (1999) Appl. Phys. A , vol.69 , pp. 131
    • Rau, U.1    Schock, H.W.2
  • 3
    • 84856932833 scopus 로고    scopus 로고
    • Atomic layer deposition of nanostructured materials for energy and environmental applications
    • C. Marichy, M. Bechelany, and N. Pinna Atomic layer deposition of nanostructured materials for energy and environmental applications Adv. Mater. 24 2012 1017
    • (2012) Adv. Mater. , vol.24 , pp. 1017
    • Marichy, C.1    Bechelany, M.2    Pinna, N.3
  • 8
    • 84859525982 scopus 로고    scopus 로고
    • Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer
    • M.V. Ponomarev, K. Sharma, M.A. Verheijen, M.C.M. van de Sanden, and M. Creatore Improved conductivity of aluminum-doped ZnO: the effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer J. Appl. Phys. 111 2012 063715
    • (2012) J. Appl. Phys. , vol.111 , pp. 063715
    • Ponomarev, M.V.1    Sharma, K.2    Verheijen, M.A.3    Van De Sanden, M.C.M.4    Creatore, M.5
  • 9
    • 0031162080 scopus 로고    scopus 로고
    • Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering
    • K.H. Kim, K.C. Park, and D.Y. Ma Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering J. Appl. Phys. 81 1997 7764
    • (1997) J. Appl. Phys. , vol.81 , pp. 7764
    • Kim, K.H.1    Park, K.C.2    Ma, D.Y.3
  • 10
    • 84863402822 scopus 로고    scopus 로고
    • Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition
    • T. Dhakal, D. Vanhart, R. Christian, A. Nandur, A. Sharma, and C.R. Westgate Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition J. Vac. Sci. Technol. A 30 2012 021202
    • (2012) J. Vac. Sci. Technol. A , vol.30 , pp. 021202
    • Dhakal, T.1    Vanhart, D.2    Christian, R.3    Nandur, A.4    Sharma, A.5    Westgate, C.R.6
  • 11
    • 36048937855 scopus 로고
    • The interpretation of the properties of indium antimonide
    • T.S. Moss The interpretation of the properties of indium antimonide Proc. Phys. Soc. B 76 1954 775
    • (1954) Proc. Phys. Soc. B , vol.76 , pp. 775
    • Moss, T.S.1
  • 12
    • 0001673831 scopus 로고
    • Faraday rotation in ZnO: Determination of the electron effective mass
    • W.S. Baer Faraday rotation in ZnO: determination of the electron effective mass Phys. Rev. 154 1967 785
    • (1967) Phys. Rev. , vol.154 , pp. 785
    • Baer, W.S.1
  • 13
    • 84867379805 scopus 로고    scopus 로고
    • Carrier transport and bandgap shift in n-type degenerate ZnO thin films: The effect of band edge nonparabolicity
    • A. Abdolahzadeh Ziabari, and S.M. Rozati Carrier transport and bandgap shift in n-type degenerate ZnO thin films: the effect of band edge nonparabolicity Physica B 407 2012 4512
    • (2012) Physica B , vol.407 , pp. 4512
    • Abdolahzadeh Ziabari, A.1    Rozati, S.M.2
  • 14
    • 84861577176 scopus 로고    scopus 로고
    • ZnO thin films deposition by spray pyrolysis: Influence of precursor solution properties
    • N. Lehraki, M.S. Aida, S. Abed, N. Attaf, A. Attaf, and M. Poulain ZnO thin films deposition by spray pyrolysis: Influence of precursor solution properties Curr. Appl. Phys. 12 2012 1283
    • (2012) Curr. Appl. Phys. , vol.12 , pp. 1283
    • Lehraki, N.1    Aida, M.S.2    Abed, S.3    Attaf, N.4    Attaf, A.5    Poulain, M.6
  • 15
    • 84894499461 scopus 로고    scopus 로고
    • Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering
    • M. Kusayanagi, A. Uchida, N. Oka, J. Jia, S. Nakamura, and Y. Shigesato Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering Thin Solid Films 555 2014 93
    • (2014) Thin Solid Films , vol.555 , pp. 93
    • Kusayanagi, M.1    Uchida, A.2    Oka, N.3    Jia, J.4    Nakamura, S.5    Shigesato, Y.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.