Use of the charge pumping technique with a sinusoidal gate waveform

Solid-State Electronics

Volumn 39, Issue 9, 1996, Pages 1394-1395

  Autran, J L ^a   Chabrerie, C ^b  

^a CEA DIF   (France)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON EMISSION; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); INTERFACES (MATERIALS); MATHEMATICAL MODELS; WAVEFORM ANALYSIS;

CHARGE PUMPING TECHNIQUE; GATE SIGNAL; SINUSOIDAL GATE WAVEFORM;

MOSFET DEVICES;

EID: 0030243578     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00039-1     Document Type: Article

References (5)

1. G. Groeseneken, H. E. Maes, N. Beltran and R. F. de Keersmaecker, IEEE Trans. Electron. Devices ED-31, 42 (1984).
2. U. Cilingiroglu, Soild-St. Electron. 28, 1127 (1985).
3. R. A. Wachnik and J. R. Lowney, Solid-St. Electron. 29, 447 (1986).
4. Sine wave generation techniques, Natl Semicond. Appl. Note no. 263.
5. G. Van den Bosch, G. Groeseneken, P. Heremans and H. E. Macs, IEEE Trans. Electron Devices ED-38, 1820 (1991).