Quasi-non volatile flatband-voltage shift in metal-oxide-semiconductor capacitors with silicon-rich-oxide dielectric

European Solid-State Device Research Conference

Volumn , Issue , 2001, Pages 383-386

  Rosmeulen, M ^a,b   Sleeckx, E ^a   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

METAL-OXIDE-SEMICONDUCTOR CAPACITORS;

EID: 84907487263     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2001.195281     Document Type: Conference Paper

References (6)

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4. J. De Blauwe et al., IEDM Tech. Dig., 2000, pp. 683-686.
5. Y.-C. King et al., IEEE El. Dev. Lett 20., 1999, pp. 409-411.
6. H. Bachhofer et al., J. Appl. Phys. 89, 2001, pp. 2791-2800.