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Volumn 22, Issue 18, 2014, Pages 22095-22100

Wavelength dependence of Pockels effect in strained silicon waveguides

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN COMPOUNDS; NONLINEAR OPTICS; OPTICAL WAVEGUIDES; SILICON NITRIDE;

EID: 84907289331     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.22.022095     Document Type: Article
Times cited : (54)

References (17)
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    • Chmielak, B.1    Matheisen, C.2    Ripperda, C.3    Bolten, J.4    Wahlbrink, T.5    Waldow, M.6    Kurz, H.7
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    • Tensor of the second-order nonlinear susceptibility in asymmetrically strained silicon waveguides: Analysis and experimental validation
    • M. W. Puckett, J. S. T. Smalley, M. Abashin, A. Grieco, and Y. Fainman, "Tensor of the second-order nonlinear susceptibility in asymmetrically strained silicon waveguides: analysis and experimental validation," Opt. Lett. 39, 1693-1696 (2014).
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    • Stress investigation of PECVD dielectric layers for advanced optical MEMS
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    • Bulk and surface contributions to second-order susceptibility in crystalline and porous silicon by second-harmonic generation
    • M. Falasconi, L. Andreani, A. Malvezzi, M. Patrini, V. Mulloni, and L. Pavesi, "Bulk and surface contributions to second-order susceptibility in crystalline and porous silicon by second-harmonic generation," Surf. Sci. 481, 105-112 (2001).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.