Electronic and vibrational properties of defective transition metal dichalcogenide Haeckelites: New 2D semi-metallic systems

2D Materials

Volumn 1, Issue 1, 2014, Pages

  Terrones, H ^a,c   Terrones, M ^a,b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SHINSHU UNIVERSITY   (Japan)

^c Research Rensselaer Polytechnic Institute   (United States)

Author keywords

Graphene; Layered materials; Raman spectrum

Indexed keywords

CALCULATIONS; ELECTRONIC PROPERTIES; ENERGY GAP; GRAPHENE; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NIOBIUM COMPOUNDS; RAMAN SCATTERING; SELENIUM COMPOUNDS; TRANSITION METALS; TUNGSTEN COMPOUNDS;

DIRECT BAND GAP; FIRST-PRINCIPLES CALCULATION; HAECKELITES; LAYERED MATERIAL; METALLIC SYSTEMS; TRANSITION METAL DICHALCOGENIDES; VIBRATIONAL PROPERTIES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84907160658     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/1/1/011003     Document Type: Article

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