Improved room temperature electron mobility in self-buffered anatase TiO2 epitaxial thin film grown at low temperature

Japanese Journal of Applied Physics

Volumn 53, Issue 9, 2014, Pages

  Krasienapibal, Thantip S ^a   Fukumura, Tomoteru ^a,b,c   Hirose, Yasushi ^a,b,c   Hasegawa, Tetsuya ^a,b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; PULSED LASER DEPOSITION; SURFACE ROUGHNESS; THIN FILMS;

ANATASE TIO; EPITAXIAL THIN FILMS; LAYER-BY-LAYER GROWTH; LOW TEMPERATURES; OPTIMAL CONDITIONS; OXYGEN PRESSURE; ROOM TEMPERATURE; TIO;

TITANIUM DIOXIDE;

EID: 84906858334     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.090305     Document Type: Article

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