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Volumn , Issue , 2014, Pages

High-frequency integrated gate drivers for half-bridge GaN power stage

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; SILICON CARBIDE;

EID: 84906821095     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMPEL.2014.6877120     Document Type: Conference Paper
Times cited : (23)

References (18)
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    • Hu, J.1    Sagneri, A.2    Rivas, J.3    Han, Y.4    Davis, S.5    Perreault, D.6
  • 6
    • 84872021924 scopus 로고    scopus 로고
    • Optimization of integrated transistors for very high frequency dc-dc converters
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    • A. Sagneri, D. Anderson, and D. Perreault, "Optimization of integrated transistors for very high frequency dc-dc converters," IEEE Trans. Power Electron., vol. 28, no. 7, pp. 3614-3626, Jul. 2013.
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    • Sagneri, A.1    Anderson, D.2    Perreault, D.3
  • 7
    • 84871798377 scopus 로고    scopus 로고
    • Gan hemt class e2 resonant topologies for uhf dc/dc power conversion
    • Dec.
    • J. Garcia, R. Marante, and M. de las Nieves Ruiz Lavin, "GaN HEMT Class E2 resonant topologies for UHF DC/DC power conversion," IEEE Trans. Microw. Theory Tech., vol. 60, no. 12, pp. 4220-4229, Dec. 2012.
    • (2012) IEEE Trans. Microw. Theory Tech. , vol.60 , Issue.12 , pp. 4220-4229
    • Garcia, J.1    Marante, R.2    De Las Nieves Ruiz Lavin, M.3
  • 8
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    • A 1 ghz frequencycontrolled class e2 dc/dc converter for efficiently handling wideband signal envelopes
    • Jun.
    • J. Garcia, R. Marante, M. Ruiz, and G. Hernandez, "A 1 GHz frequencycontrolled class E2 DC/DC converter for efficiently handling wideband signal envelopes," in Proc. IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2013, pp. 1-4.
    • Proc. IEEE MTT-S Int. Microw. Symp. Dig. , vol.2013 , pp. 1-4
    • Garcia, J.1    Marante, R.2    Ruiz, M.3    Hernandez, G.4
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    • High-frequency pwm buck converters using gan-on-sic hemts
    • M. Rodriguez, Y. Zhang, and D. Maksimovic, "High-frequency PWM buck converters using GaN-on-SiC HEMTs," IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2462-2473, 2014.
    • (2014) IEEE Trans. Power Electron. , vol.29 , Issue.5 , pp. 2462-2473
    • Rodriguez, M.1    Zhang, Y.2    Maksimovic, D.3
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    • 84875972754 scopus 로고    scopus 로고
    • High speed, high analog bandwidth buck converter using gan hemts for envelope tracking power amplifier applications
    • S. Shinjo, Y.-P. Hong, H. Gheidi, D. Kimball, and P. Asbeck, "High speed, high analog bandwidth buck converter using GaN HEMTs for envelope tracking power amplifier applications," in Proc. IEEE Wireless Sens. and Sens. Netw., 2013, pp. 13-15.
    • (2013) Proc. IEEE Wireless Sens. and Sens. Netw. , pp. 13-15
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    • TriQuint. (2014) High-power/high-performance gallium nitride. [Online]. Available
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    • D. Sardin and Z. Popovic, "Decade bandwidth high-efficiency GaN VHF/UHF power amplifier," in Proc. IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2013, pp. 1-3.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.