X-band MMIC GaN power amplifiers designed for high-efficiency supply-modulated transmitters

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2013, Pages

  Schafer, Scott ^a   Litchfield, Michael ^a   Zai, Andrew ^a   Popovíc, Zoya ^a   Campbell, Chuck ^b  

^a UCB 450   (United States)

^b TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Gallium Nitride; MMICs; Power amplifiers

Indexed keywords

CONTINUOUS WAVE; DRAIN BIAS VOLTAGE; GAN POWER AMPLIFIER; HIGH-EFFICIENCY; LARGE-SIGNALS; MMICS; OPERATING CONDITION; PROCESS TECHNOLOGIES;

GALLIUM NITRIDE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SILICON CARBIDE;

POWER AMPLIFIERS;

EID: 84893273865     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2013.6697435     Document Type: Conference Paper

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