메뉴 건너뛰기




Volumn 116, Issue 6, 2014, Pages

Near-infrared free carrier absorption in heavily doped silicon

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; DOPING (ADDITIVES); INFRARED DEVICES; OPTOELECTRONIC DEVICES; PHOSPHORUS; SILICON; UNCERTAINTY ANALYSIS;

EID: 84906309175     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4893176     Document Type: Article
Times cited : (147)

References (47)
  • 1
    • 0017930821 scopus 로고
    • Free carrier absorption in silicon
    • 10.1109/JSSC.1978.1051012
    • D. K. Schroder, R. N. Thomas, and J. C. Swartz, " Free carrier absorption in silicon," IEEE J. Solid State Circuits SC-13 (1), 180-187 (1978). 10.1109/JSSC.1978.1051012
    • (1978) IEEE J. Solid State Circuits , vol.13 , Issue.1 , pp. 180-187
    • Schroder, D.K.1    Thomas, R.N.2    Swartz, J.C.3
  • 2
    • 0019145461 scopus 로고
    • The optical (free-carrier) absorption of a hole-electron plasma in silicon
    • 10.1016/0038-1101(80)90111-2
    • C. M. Horwitz and R. M. Swanson, " The optical (free-carrier) absorption of a hole-electron plasma in silicon," Solid-State Electron. 23, 1191-1194 (1980). 10.1016/0038-1101(80)90111-2
    • (1980) Solid-State Electron. , vol.23 , pp. 1191-1194
    • Horwitz, C.M.1    Swanson, R.M.2
  • 4
    • 0031617663 scopus 로고    scopus 로고
    • Spectral utilization in thermophotovoltaic devices
    • 10.1557/PROC-485-291
    • M. B. Clevenger, C. S. Murray, and D. R. Riley, " Spectral utilization in thermophotovoltaic devices," Mater. Res. Soc. Proc. 485, 291-296 (1997). 10.1557/PROC-485-291
    • (1997) Mater. Res. Soc. Proc. , vol.485 , pp. 291-296
    • Clevenger, M.B.1    Murray, C.S.2    Riley, D.R.3
  • 5
    • 78650281784 scopus 로고    scopus 로고
    • Near-infrared sub-bandgap all-silicon photodetectors: State of the art and perspectives
    • 10.3390/s101210571
    • M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, " Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives," Sensors 10, 10571-10600 (2010). 10.3390/s101210571
    • (2010) Sensors , vol.10 , pp. 10571-10600
    • Casalino, M.1    Coppola, G.2    Iodice, M.3    Rendina, I.4    Sirleto, L.5
  • 6
    • 2142771771 scopus 로고    scopus 로고
    • Free carrier absorption in heavily doped silicon layers
    • 10.1063/1.1690105
    • J. Isenberg and W. Warta, " Free carrier absorption in heavily doped silicon layers," Appl. Phys. Lett. 84 (13), 2265-2267 (2004). 10.1063/1.1690105
    • (2004) Appl. Phys. Lett. , vol.84 , Issue.13 , pp. 2265-2267
    • Isenberg, J.1    Warta, W.2
  • 7
    • 0004278609 scopus 로고
    • 2nd ed. (Cambridge University Press, Cambridge, UK)
    • R. A. Smith, Semiconductors, 2nd ed. (Cambridge University Press, Cambridge, UK, 1959), pp. 216-219.
    • (1959) Semiconductors , pp. 216-219
    • Smith, R.A.1
  • 9
    • 36549104064 scopus 로고
    • Quantum calculations of the change of refractive index due to free carriers in silicon with nonparabolic band structure
    • 10.1063/1.345586
    • H. C. Huang, S. Yee, and M. Soma, " Quantum calculations of the change of refractive index due to free carriers in silicon with nonparabolic band structure," J. Appl. Phys. 67 (4), 2033-2039 (1990). 10.1063/1.345586
    • (1990) J. Appl. Phys. , vol.67 , Issue.4 , pp. 2033-2039
    • Huang, H.C.1    Yee, S.2    Soma, M.3
  • 11
    • 84879946322 scopus 로고    scopus 로고
    • Parameterization of free carrier absorption in highly doped silicon for solar cells
    • 10.1109/TED.2013.2262526
    • M. Rudiger, J. Greulich, A. Richter, and M. Hermle, " Parameterization of free carrier absorption in highly doped silicon for solar cells," IEEE Trans. Electron Devices 60 (7), 2156-2163 (2013). 10.1109/TED.2013.2262526
    • (2013) IEEE Trans. Electron Devices , vol.60 , Issue.7 , pp. 2156-2163
    • Rudiger, M.1    Greulich, J.2    Richter, A.3    Hermle, M.4
  • 15
    • 84869140662 scopus 로고
    • 10.1002/and19003060312
    • P. Drude, Ann. Phys. 306, 566 (1900). 10.1002/andp.19003060312
    • (1900) Ann. Phys. , vol.306 , pp. 566
    • Drude, P.1
  • 16
    • 0000435694 scopus 로고
    • Theory of the infrared absorption of carriers in germanium and silicon
    • 10.1103/PhysRev.97.1647
    • A. H. Kahn, " Theory of the infrared absorption of carriers in germanium and silicon," Phys. Rev. 97 (6), 1647-1652 (1955). 10.1103/PhysRev.97.1647
    • (1955) Phys. Rev. , vol.97 , Issue.6 , pp. 1647-1652
    • Kahn, A.H.1
  • 17
    • 33749462668 scopus 로고    scopus 로고
    • 3+ doped tin oxides using Fourier transform infrared spectroscopy
    • 10.1063/1.2360185
    • 3+ doped tin oxides using Fourier transform infrared spectroscopy," Appl. Phys. Lett. 89, 143116 (2006). 10.1063/1.2360185
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 143116
    • Drake, C.1    Deshpande, S.2    Seal, S.3
  • 18
    • 2142714769 scopus 로고
    • Comparison of classical approximations to free carrier absorption in semiconductors
    • 10.1016/0038-1101(67)90009-3
    • P. A. Schumann and R. P. Phillips, " Comparison of classical approximations to free carrier absorption in semiconductors," Solid-State Electron. 10, 943-948 (1967). 10.1016/0038-1101(67)90009-3
    • (1967) Solid-State Electron. , vol.10 , pp. 943-948
    • Schumann, P.A.1    Phillips, R.P.2
  • 19
    • 36149028172 scopus 로고
    • Theory of impurity scattering in semiconductors
    • 10.1103/PhysRev.77.388
    • E. M. Conwell and V. F. Weisskopf, " Theory of impurity scattering in semiconductors," Phys. Rev. 77 (3), 388-390 (1950). 10.1103/PhysRev.77. 388
    • (1950) Phys. Rev. , vol.77 , Issue.3 , pp. 388-390
    • Conwell, E.M.1    Weisskopf, V.F.2
  • 20
    • 42549173616 scopus 로고
    • Infra-red and microwave modulation using free carriers in semiconductors
    • 10.1088/0950-7671/35/8/301
    • A. F. Gibson, " Infra-red and microwave modulation using free carriers in semiconductors," J. Sci. Instrum. 35, 273-278 (1958). 10.1088/0950-7671/35/8/301
    • (1958) J. Sci. Instrum. , vol.35 , pp. 273-278
    • Gibson, A.F.1
  • 21
    • 0000167713 scopus 로고
    • Carrier dynamics of electrons and holes in moderately doped silicon
    • 10.1103/PhysRevB.41.12140
    • M. van Exeter and D. Grischkowsky, " Carrier dynamics of electrons and holes in moderately doped silicon," Phys. Rev. B 41 (17), 12140-12149 (1990). 10.1103/PhysRevB.41.12140
    • (1990) Phys. Rev. B , vol.41 , Issue.17 , pp. 12140-12149
    • Van Exeter, M.1    Grischkowsky, D.2
  • 22
    • 77949355777 scopus 로고
    • Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration
    • 10.1364/AO.32.001122
    • S. Hava and M. Auslender, " Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration," Appl. Opt. 32 (7), 1122-1125 (1993). 10.1364/AO.32.001122
    • (1993) Appl. Opt. , vol.32 , Issue.7 , pp. 1122-1125
    • Hava, S.1    Auslender, M.2
  • 23
    • 0020799404 scopus 로고
    • Calculated and measured infrared reflectivity of diffused/implanted p-type silicon layers
    • 10.1088/0022-3727/16/8/021
    • E. Barta and G. Lux, " Calculated and measured infrared reflectivity of diffused/implanted p-type silicon layers," J. Phys. D: Appl. Phys. 16, 1543-1553 (1983). 10.1088/0022-3727/16/8/021
    • (1983) J. Phys. D: Appl. Phys. , vol.16 , pp. 1543-1553
    • Barta, E.1    Lux, G.2
  • 24
    • 5444267433 scopus 로고
    • Optical properties of heavily doped silicon between 1.5 and 4.1 eV
    • 10.1103/PhysRevLett.46.1414
    • G. E. Jellison, F. A. Modine, C. W. White, R. F. Wood, and R. T. Young, " Optical properties of heavily doped silicon between 1.5 and 4.1 eV," Phys. Rev. Lett. 46 (21), 1414-1417 (1981). 10.1103/PhysRevLett.46.1414
    • (1981) Phys. Rev. Lett. , vol.46 , Issue.21 , pp. 1414-1417
    • Jellison, G.E.1    Modine, F.A.2    White, C.W.3    Wood, R.F.4    Young, R.T.5
  • 25
    • 0022082647 scopus 로고
    • Determination of the electron effective mass and relaxation time in heavily doped silicon
    • 10.1002/pssa.2210890223
    • A. Slaoui and P. Siffert, " Determination of the electron effective mass and relaxation time in heavily doped silicon," Phys. Status Solidi A 89, 617-622 (1985). 10.1002/pssa.2210890223
    • (1985) Phys. Status Solidi A , vol.89 , pp. 617-622
    • Slaoui, A.1    Siffert, P.2
  • 26
    • 0000920502 scopus 로고
    • Optical absorption in heavily doped silicon
    • 10.1103/PhysRevB.23.5531
    • P. E. Schmid, " Optical absorption in heavily doped silicon," Phys. Rev. B 23 (10), 5531-5536 (1981). 10.1103/PhysRevB.23.5531
    • (1981) Phys. Rev. B , vol.23 , Issue.10 , pp. 5531-5536
    • Schmid, P.E.1
  • 27
    • 0010886121 scopus 로고
    • Infrared absorption in n-type germanium
    • 10.1103/PhysRev.101.566
    • H. Y. Fan, W. Spitzer, and R. J. Collins, " Infrared absorption in n-type germanium," Phys. Rev. 101 (2), 566-572 (1956). 10.1103/PhysRev.101. 566
    • (1956) Phys. Rev. , vol.101 , Issue.2 , pp. 566-572
    • Fan, H.Y.1    Spitzer, W.2    Collins, R.J.3
  • 28
    • 0008498504 scopus 로고
    • Infrared absorption in n-type silicon
    • 10.1103/PhysRev.108.268
    • W. Spitzer and H. Y. Fan, " Infrared absorption in n-type silicon," Phys. Rev. 108 (2), 268-271 (1957). 10.1103/PhysRev.108.268
    • (1957) Phys. Rev. , vol.108 , Issue.2 , pp. 268-271
    • Spitzer, W.1    Fan, H.Y.2
  • 29
    • 0040734474 scopus 로고
    • Properties of heavily doped n-type germanium
    • 10.1063/1.1728243
    • W. G. Spitzer, F. A. Trumbore, and R. A. Logan, " Properties of heavily doped n-type germanium," J. Appl. Phys. 32 (10), 1822-1830 (1961). 10.1063/1.1728243
    • (1961) J. Appl. Phys. , vol.32 , Issue.10 , pp. 1822-1830
    • Spitzer, W.G.1    Trumbore, F.A.2    Logan, R.A.3
  • 30
    • 0000145491 scopus 로고
    • Optical functions of ion-implanted, laser-annealed heavily doped silicon
    • 10.1103/PhysRevB.52.14607
    • G. E. Jellison, S. P. Withrow, J. W. McCamy, J. D. Budai, D. Lubben, and M. J. Godbole, " Optical functions of ion-implanted, laser-annealed heavily doped silicon," Phys. Rev. B 52 (20), 14607-14614 (1995). 10.1103/PhysRevB.52.14607
    • (1995) Phys. Rev. B , vol.52 , Issue.20 , pp. 14607-14614
    • Jellison, G.E.1    Withrow, S.P.2    McCamy, J.W.3    Budai, J.D.4    Lubben, D.5    Godbole, M.J.6
  • 31
    • 0012068962 scopus 로고    scopus 로고
    • Temperature dependence of silicon carrier effective masses with application to femtosecond reflectivity measurements
    • 10.1364/JOSAB.19.001092
    • D. M. Riffe, " Temperature dependence of silicon carrier effective masses with application to femtosecond reflectivity measurements," J. Opt. Soc. Am. B 19 (5), 1092-1100 (2002). 10.1364/JOSAB.19.001092
    • (2002) J. Opt. Soc. Am. B , vol.19 , Issue.5 , pp. 1092-1100
    • Riffe, D.M.1
  • 32
    • 0026899612 scopus 로고
    • A unified mobility model for device simulation - I. Model equations and concentration dependence
    • 10.1016/0038-1101(92)90325-7
    • D. B. M. Klaassen, " A unified mobility model for device simulation-I. Model equations and concentration dependence," Solid-State Electron. 35 (7), 953-959 (1992). 10.1016/0038-1101(92)90325-7
    • (1992) Solid-State Electron. , vol.35 , Issue.7 , pp. 953-959
    • Klaassen, D.B.M.1
  • 35
    • 50249121880 scopus 로고    scopus 로고
    • Self-consistent optical parameters of intrinsic silicon at 300K including temperature coefficients
    • 10.1016/j.solmat.2008.06.009
    • M. A. Green, " Self-consistent optical parameters of intrinsic silicon at 300K including temperature coefficients," Sol. Energy Mater. Sol. Cells 92, 1305-1310 (2008). 10.1016/j.solmat.2008.06.009
    • (2008) Sol. Energy Mater. Sol. Cells , vol.92 , pp. 1305-1310
    • Green, M.A.1
  • 36
    • 84897864989 scopus 로고    scopus 로고
    • Temperature dependence of the band-band absorption coefficienc in crystalline silicon from photoluminescence
    • 10.1063/1.4862912
    • H. T. Nguyen, F. E. Rougieux, B. Mitchell, and D. Macdonald, " Temperature dependence of the band-band absorption coefficienc in crystalline silicon from photoluminescence," J. Appl. Phys. 115 (4), 043710 (2014). 10.1063/1.4862912
    • (2014) J. Appl. Phys. , vol.115 , Issue.4 , pp. 043710
    • Nguyen, H.T.1    Rougieux, F.E.2    Mitchell, B.3    Macdonald, D.4
  • 37
    • 84896803153 scopus 로고    scopus 로고
    • Uncertainty of the coefficient of band-to-band absorption of crystalline silicon at near-infrared wavelengths
    • 10.1063/1.4866916
    • C. Schinke, K. Bothe, P. C. Peest, J. Schmidt, and R. Brendel, " Uncertainty of the coefficient of band-to-band absorption of crystalline silicon at near-infrared wavelengths," Appl. Phys. Lett. 104, 081915 (2014). 10.1063/1.4866916
    • (2014) Appl. Phys. Lett. , vol.104 , pp. 081915
    • Schinke, C.1    Bothe, K.2    Peest, P.C.3    Schmidt, J.4    Brendel, R.5
  • 38
    • 33845762895 scopus 로고    scopus 로고
    • A simulation model for the density of states and for incomplete ionization in crystalline silicon I. Establishing the model in Si:P
    • 10.1063/1.2386934
    • P. P. Altermatt, A. Schenk, and G. Heiser, " A simulation model for the density of states and for incomplete ionization in crystalline silicon I. Establishing the model in Si:P," J. Appl. Phys. 100, 113714 (2006). 10.1063/1.2386934
    • (2006) J. Appl. Phys. , vol.100 , pp. 113714
    • Altermatt, P.P.1    Schenk, A.2    Heiser, G.3
  • 39
    • 33845762895 scopus 로고    scopus 로고
    • A simulation model for the density of states and for incomplete ionization in crystalline silicon II. Investigation of Si:As and Si:B and usage in device simulation
    • 10.1063/1.2386935
    • P. P. Altermatt, A. Schenk, B. Schmithusen, and G. Heiser, " A simulation model for the density of states and for incomplete ionization in crystalline silicon II. Investigation of Si:As and Si:B and usage in device simulation," J. Appl. Phys. 100, 113715 (2006). 10.1063/1.2386935
    • (2006) J. Appl. Phys. , vol.100 , pp. 113715
    • Altermatt, P.P.1    Schenk, A.2    Schmithusen, B.3    Heiser, G.4
  • 40
    • 84906326743 scopus 로고    scopus 로고
    • Free Carrier Absorption Calculator, see, accessed 28 April, 2014.
    • Free Carrier Absorption Calculator, see www.pvlighthouse.com.au, accessed 28 April, 2014.
  • 41
    • 0036648322 scopus 로고    scopus 로고
    • Complex refractive index of a slab from reflectance and transmittance: Analytical solution
    • 10.1088/1464-4258/4/4/306
    • E. Nichelatti, " Complex refractive index of a slab from reflectance and transmittance: analytical solution," J. Opt. A: Pure Appl. Opt. 4, 400-403 (2002). 10.1088/1464-4258/4/4/306
    • (2002) J. Opt. A: Pure Appl. Opt. , vol.4 , pp. 400-403
    • Nichelatti, E.1
  • 43
    • 84906326750 scopus 로고    scopus 로고
    • 32
    • 32
  • 44
    • 84906326749 scopus 로고    scopus 로고
    • 34
    • 34
  • 45
    • 84906326747 scopus 로고    scopus 로고
    • 37
    • 37
  • 46
    • 84906326745 scopus 로고    scopus 로고
    • Note that the free carrier absorptance is, to first order, dependent on the sheet resistance. For this demonstration, we might equally have chosen a 100 nm depth factor (and higher surface concentrations) to calculate similar, though not identical results.
    • Note that the free carrier absorptance is, to first order, dependent on the sheet resistance. For this demonstration, we might equally have chosen a 100 nm depth factor (and higher surface concentrations) to calculate similar, though not identical results.
  • 47
    • 84906326738 scopus 로고    scopus 로고
    • i do not lie in regions of rapidly varying mobility.
    • i do not lie in regions of rapidly varying mobility.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.