Parameterization of free carrier absorption in highly doped silicon for solar cells

IEEE Transactions on Electron Devices

Volumn 60, Issue 7, 2013, Pages 2156-2163

  Rudiger, Marc ^a   Greulich, Johannes ^a   Richter, Armin ^a   Hermle, Martin ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Free carrier absorption (FCA); silicon devices

Indexed keywords

ABSORPTION PROCESS; ELECTRON HOLE PAIRS; FREE CARRIER ABSORPTION; NEW PARAMETERS; OPTICAL SIMULATION; REFLECTION DATA; SILICON DEVICES; WAVELENGTH RANGES;

SILICON; SILICON SOLAR CELLS; WAVELENGTH;

PARAMETERIZATION;

EID: 84879946322     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2262526     Document Type: Article

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