Effect of annealing on silicon heterojunction solar cells with textured ZnO: Al as transparent conductive oxide

EPJ Photovoltaics

Volumn 3, Issue , 2012, Pages

  Salomon, A ^a   Courtois, G ^a,b   Charpentier, C ^a,b   Labrune, M ^a,b   Prod'Homme, P ^a   Francke, L ^a   Roca I Cabarrocas, P ^b  

^a TOTAL   (France)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDE; ANNEALING; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; OPEN CIRCUIT VOLTAGE; OPTICAL FILMS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIO WAVES; SILICON WAFERS; SOLAR CELLS; TEXTURES; TIN OXIDES; TRANSPARENT CONDUCTING OXIDES; ZINC OXIDE;

ALUMINUM DOPED ZINC OXIDES (ZNO:AL); CRYSTALLINE SILICON WAFERS; EFFECT OF ANNEALING; EXTERNAL QUANTUM EFFICIENCY; RADIO FREQUENCY MAGNETRON SPUTTERING; RADIO FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS; SILICON HETEROJUNCTIONS; TRANSPARENT CONDUCTIVE OXIDES;

SILICON SOLAR CELLS;

EID: 84905918915     PISSN: None     EISSN: 21050716     Source Type: Journal    
DOI: 10.1051/epjpv/2012004     Document Type: Article

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