Carrier transport in PbS and PbSe QD films measured by photoluminescence quenching

Journal of Physical Chemistry C

Volumn 118, Issue 29, 2014, Pages 16228-16235

  Zhang, Jing ^b   Tolentino, Jason ^c   Smith, E Ryan ^a   Zhang, Jianbing ^d   Beard, Matthew C ^a   Nozik, Arthur J ^a,b   Law, Matt ^c   Johnson, Justin C ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF COLORADO   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; FIELD EFFECT TRANSISTORS; LIGANDS; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING LEAD COMPOUNDS;

CHARGE SEPARATIONS; NON-RADIATIVE RECOMBINATIONS; PHOTOLUMINESCENCE QUENCHING; POTENTIAL BARRIERS; TEMPERATURE DEPENDENT; THERMAL ACTIVATION; TRANSPORT MECHANISM; TUNNELING PARAMETER;

THIN FILMS;

EID: 84904977273     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp504240u     Document Type: Article

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