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Volumn , Issue , 2014, Pages 405-408

A D-band transceiver front-end for broadband applications in a 0.35μm SiGe bipolar technology

Author keywords

122 GHz; bipolar technology; D band; high linearity; low noise; low phase noise; low power; receiver; SiGe

Indexed keywords

BUFFER AMPLIFIERS; DIGITAL INTEGRATED CIRCUITS; PHASE NOISE; RECEIVERS (CONTAINERS); TRANSCEIVERS; TRANSMITTERS;

EID: 84904964497     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2014.6851753     Document Type: Conference Paper
Times cited : (23)

References (8)
  • 1
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    • March
    • I. Sarkas, J. Hasch, A. Balteanu and S.P. Voinigescu, "A fundamental frequency 120-GHz SiGe BiCMOS distance sensor with integrated antenna," IEEE Trans. Microw. Theory Tech., vol. 60, no. 3, pp. 795-812, March 2012
    • (2012) IEEE Trans. Microw. Theory Tech , vol.60 , Issue.3 , pp. 795-812
    • Sarkas, I.1    Hasch, J.2    Balteanu, A.3    Voinigescu, S.P.4
  • 2
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    • A subharmonic receiver in SiGe technology for 122 GHz sensor applications
    • Sep
    • K. Schmalz et al., "A subharmonic receiver in SiGe technology for 122 GHz sensor applications," IEEE JSSC, vol. 45, no. 9, pp. 1644-1656, Sep. 2010
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  • 3
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    • June
    • C. BreDendiek et al., "An ultra-wiDeband D-band signal source chip using a fundamental VCO with frequency doubler in a SiGe bipolar technology," in IEEE RFIC Symp. Dig., June 2012, pp. 83-86
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    • Bredendiek, C.1
  • 4
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    • June
    • C. BreDendiek et al., "A 240 GHz single-chip radar transceiver in a SiGe bipolar technology with on-chip antennas and ultra-wiDe tuning range," in IEEE RFIC Symp. Dig., June 2013, pp. 309-312
    • (2013) IEEE RFIC Symp. Dig. , pp. 309-312
    • Bredendiek, C.1
  • 5
    • 20144386613 scopus 로고    scopus 로고
    • SiGe Bipolar technology for automotive radar applications
    • Sep
    • J. Böck et al., "SiGe Bipolar technology for automotive radar applications," in Proc. IEEE Bipolar/BiCMOS Circ. and Tech. Meet., Sep. 2004, pp. 84-87
    • (2004) Proc. IEEE Bipolar/BiCMOS Circ. and Tech. Meet. , pp. 84-87
    • Böck, J.1
  • 6
    • 84899876904 scopus 로고    scopus 로고
    • A low-phase-noise monolithically integrated 60 GHz push-push VCO for 122 GHz applications in a SiGe bipolar technology
    • Oct
    • A. Chakraborty, S. Trotta and R. Weigel, "A low-phase-noise monolithically integrated 60 GHz push-push VCO for 122 GHz applications in a SiGe bipolar technology," in Proc. IEEE Bipolar/BiCMOS Circ. and Tech. Meet., Oct. 2013, pp. 195-198
    • (2013) Proc. IEEE Bipolar/BiCMOS Circ. and Tech. Meet. , pp. 195-198
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  • 7
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    • An RCP packaged transceiver chipset for automotive LRR and SRR systems in SiGe BiCMOS technology
    • March
    • S. Trotta et al., "An RCP packaged transceiver chipset for automotive LRR and SRR systems in SiGe BiCMOS technology," IEEE J. Solid-State Circuits, vol. 60, no. 3, pp. 778-794, March 2012
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  • 8
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    • A GaAs-based HBT 31-GHz frequency doubler with an on-chip voltage
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    • B. J. Haung et al., "A GaAs-based HBT 31-GHz frequency doubler with an on-chip voltage," in Asia-Pacific Microw. Symp. Dig., Dec. 2008, pp. 1-4.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.