Effects of the Cu off-stoichiometry on transport properties of wide gap p -type semiconductor, layered oxysulfide LaCuSO

Applied Physics Letters

Volumn 105, Issue 2, 2014, Pages

  Goto, Yosuke ^a   Tanaki, Mai ^a   Okusa, Yuki ^a   Shibuya, Taizo ^a   Yasuoka, Kenji ^a   Matoba, Masanori ^a   Kamihara, Yoichi ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; COPPER COMPOUNDS; DENSITY FUNCTIONAL THEORY; ENERGY GAP; LANTHANUM COMPOUNDS; LIGHT ABSORPTION; STOICHIOMETRY; THERMAL CONDUCTIVITY; WIDE BAND GAP SEMICONDUCTORS;

BROAD ABSORPTIONS; CHARGE IMBALANCE; ELECTRICAL TRANSPORT PROPERTIES; LATTICE COMPONENTS; P TYPE SEMICONDUCTOR; SULFUR VACANCIES; THERMAL TRANSPORT PROPERTIES; TRANSPARENT SEMICONDUCTOR;

SULFUR COMPOUNDS;

EID: 84904735578     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4890302     Document Type: Article

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