Effect of energy reduction in SUB-keV boron implantation on ultra-shallow junction formation

Proceedings of the International Conference on Ion Implantation Technology

Volumn 1, Issue , 1999, Pages 18-21

  Yasunaga, T ^a   Matsuda, ^a   Shishiguchi, S ^a   Saito, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; SEMICONDUCTING BORON;

SHORT CHANNEL EFFECT;

SEMICONDUCTOR JUNCTIONS;

EID: 0033309649     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)