Effects of beam energy purity on junction depths in submicron devices

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 96-99

  Rubin, Leonard ^a   Morris, Wesley ^a  

^a EATON CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRIC CHARGE; IMPURITIES; ION BEAMS; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS;

CHARGE EXCHANGE REACTIONS; MASS ANALYSIS; P CHANNEL METAL OXIDE SEMICONDUCTOR (PMOS) DEVICES;

CMOS INTEGRATED CIRCUITS;

EID: 0030374655     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)