Junction profiles of sub keV ion implantation for deep sub-quarter micron devices

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 87-90

  Al Bayati, Amir ^a   Tandon, Sanjeev ^a   Doherty, Roisin ^a   Murrell, Adrian ^a   Wagner, Dennis ^a   Foad, Majeed ^a   Adibi, Babak ^a   Mickevicius, Rimvydas ^b   Meniailenko, Victor ^b   Simeonov, Simeon ^b   Jain, Amitabh ^c   Sing, David ^d   Ferguson, Clarence ^d   Murto, Robert ^d   Larson, Larry ^d  

^a APPLIED MATERIALS INC   (United States)

^b Integrated Systems Engineering Inc   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

B ION IMPLANTATION; BEAM CURRENTS; DEVICE PERFORMANCE; DEVICE TECHNOLOGIES; ENERGY CONTAMINATION; HIGH CURRENTS; ISE TCAD; JUNCTION PROFILES; LOW LEVEL; LOWER ENERGIES; P+/N JUNCTION; PRODUCTION WAFERS; PROJECTED RANGE; QUANTUM LEAPS; ROADMAP; SUB-KEV; TRANSIENT ENHANCED DIFFUSION; ULTRA SHALLOW JUNCTION;

CONTAMINATION; THROUGHPUT;

ION IMPLANTATION;

EID: 78649814478     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924097     Document Type: Conference Paper

References (7)

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6. DIOS Manual, Rel. 6.1, Vol. 3, Zurich Switzerland, ISE Integrated Systems Engineering AG, 2000. (see also www.rise.com)
7. MDRAW Manual, Rel. 6 1, Vol. , Zurich Switzerland, ISE Integrated Systems Engineering AG, 2000. (see also www.ise.com)