SCOPUS 정보 검색 플랫폼

Volumn 6, Issue 15, 2014, Pages 8551-8555

All solution processed low turn-on voltage near infrared LEDs based on core-shell PbS-CdS quantum dots with inverted device structure

(6) Sanchez, Rafael S a Binetti, Enrico b,c Torre, Jose A a Garcia Belmonte, G a Striccoli, Marinella b Mora Sero, Ivan a

a UNIVERSITAT JAUME I (Spain)

b UNIVERSITY OF BARI (Italy)

c CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM SULFIDE; INFRARED DEVICES; SEMICONDUCTOR QUANTUM DOTS;

ELECTRON TRANSPORT LAYERS; EXTERNAL QUANTUM EFFICIENCY; HOLE TRANSPORT LAYERS; INVERTED DEVICE STRUCTURES; LIGHT EMITTING DEVICES; POLY (3-HEXYLTHIOPHENE); REGULAR CONFIGURATION; SOLUTION PROCESSABILITY;

LIGHT EMITTING DIODES;

EID: 84904343692 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr01975j Document Type: Article

Times cited : (40)

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