Novel high-efficiency crystalline-silicon-based compound heterojunction solar cells: HCT (heterojunction with compound thin-layer)

Physical Chemistry Chemical Physics

Volumn 16, Issue 29, 2014, Pages 15400-15410

  Liu, Yiming ^a   Sun, Yun ^a   Liu, Wei ^a   Yao, Jianghong ^a  

^a NANKAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84903757314     PISSN: 14639076     EISSN: None     Source Type: Journal    
DOI: 10.1039/c4cp00668b     Document Type: Article

References (41)

1. M. Taguchi et al., 24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer IEEE J. Photovoltaics 2013 96 99
2. I. Tobías C. Cañizo J. Alonso Handb. Photovoltaic Sci. Eng. 2003
3. J. Poortmans, M. Ghannam, Y. Abdulraheem and G. Shehadah, Basic Understanding of the Role of the Interfacial Inversion Layer in the Operation, 28th EU-PVSEC, 2013, pp. 822-826
4. M. Taguchi A. Terakawa E. Maruyama M. Tanaka Obtaining a higher Voc in HIT cells Prog. Photovoltaics Res. Appl. 2005 13 481 488
5. S. Fonash, Solar Cell Device Physics, Academic Press, 2010
6. T. Mishima M. Taguchi H. Sakata E. Maruyama Development status of high-efficiency HIT solar cells Sol. Energy Mater. Sol. Cells 2011 95 18 21
7. A. Kanevce W. K. Metzger The role of amorphous silicon and tunneling in heterojunction with intrinsic thin layer (HIT) solar cells J. Appl. Phys. 2009 105 094507
8. L. Zhao C. L. Zhou H. L. Li H. W. Diao W. J. Wang Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation Sol. Energy Mater. Sol. Cells 2008 92 673 681
9. L. Shen F. Meng Z. Liu Roles of the Fermi level of doped a-Si:H and band offsets at a-Si:H/c-Si interfaces in n-type HIT solar cells Sol. Energy 2013 97 168 175
10. J. Peter Seif et al., Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells J. Appl. Phys. 2014 115 024502
11. J. Olson D. Friedman S. Kurtz High-efficiency III-V multijunction solar cells Handb. Photovoltaic Sci. Eng. 2003
12. Y. Liu Y. Sun A. Rockett A new simulation software of solar cells - wxAMPS Sol. Energy Mater. Sol. Cells 2012 98 124 128
13. Y. Liu Y. Sun A. Rockett An improved algorithm for solving equations for intra-band tunneling current in heterojunction solar cells Thin Solid Films 2012 520 4947 4950
14. N. Hernández-Como A. Morales-Acevedo Simulation of hetero-junction silicon solar cells with AMPS-1D Sol. Energy Mater. Sol. Cells 2010 94 62 67
15. R. Stangl, A. Froitzheim, M. Schmidt and W. Fuhs, Design criteria for amorphous/crystalline silicon heterojunction solar cells-a simulation study, Proc. 3rd World Conf. Photovolt. Energy Convers, 2003, vol. 2, pp. 3-6
16. N. Beck N. Wyrsch C. Hof A. Shah Mobility lifetime product - A tool for correlating a-Si:H film properties and solar cell performances J. Appl. Phys. 1996 79 9361 9368
17. T. Serin N. Serin Determination of electron-diffusion length from photocurrent characteristics of the structure ITO/a-SiC:H (p-type)/a-Si:H/a-Si:H (n-type)/Pd Appl. Phys. A: Mater. Sci. Process. 1994 431-433 1 3
18. E. F. Schubert, Room temperature properties of semiconductors: III-V phosphides Quantity, http://homepages.rpi.edu/∼schubert/Educational- resources/Materials-Semiconductors-III-V-phosphides.pdf
19. M. Umeno T. Soga K. Baskar T. Jimbo Heteroepitaxial technologies on Si for high-efficiency solar cells Sol. Energy Mater. Sol. Cells 1998 50 203 212
20. W. Shockley H. Queisser Detailed Balance Limit of Efficiency of p-n Junction Solar Cells J. Appl. Phys. 1961 32 510
21. E. Centurioni D. Iencinella Role of front contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performance IEEE Electron Device Lett. 2003 24 177 179
22. R. Schlaf H. Murata Z. Kafafi Work function measurements on indium tin oxide films J. Electron Spectrosc. Relat. Phenom. 2001 120 149 154
23. O. Gunawan T. K. Todorov D. B. Mitzi Loss mechanisms in hydrazine-processed Cu2ZnSn(Se,S)4 solar cells Appl. Phys. Lett. 2010 97 233506
24. L. Barraud et al., Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells Sol. Energy Mater. Sol. Cells 2013 115 151 156
25. S. Adachi GaAs, AlAs, and AlxGa1-xAs Material parameters for use in research and device applications J. Appl. Phys. 1985 58 R1
26. T. Soga T. Kato M. Umeno T. Jimbo Photovoltaic properties of an Al x Ga 1-x As solar cell (x = 0-0.22) grown on Si substrate by metalorganic chemical vapor deposition and thermal cycle annealing J. Appl. Phys. 1996 9375 9378
27. S. R. Huang, X. Lu, X. Wang, R. L. Opila, Windowlayer properties of GaP films grown on Si by liquid phase epitaxy, Photovolt. Spec. Conf., 2008, pp. 7-10
28. H. Li S. Wenham Influence of a-Si:H deposition power on surface passivation property and thermal stability of a-Si:H/SiNx:H stacks IEEE J. Photovoltaics 2012 2 405 410
29. M. Z. Rahman S. I. Khan Advances in surface passivation of c-Si solar cells Mater. Renewable Sustainable Energy 2012 1 1
30. G. a. Landis et al., Wide-bandgap epitaxial heterojunction windows for silicon solar cells IEEE Trans. Electron Devices 1990 37 372 381
31. T. Soga T. Jimbo M. Umeno Dislocation generation mechanisms for GaP on Si grown by metalorganic chemical vapor deposition Appl. Phys. Lett. 1993 63 2543 2545
32. R. Hull A. Fischer-Colbrie Nucleation of GaAs on Si: Experimental evidence for a three-dimensional critical transition Appl. Phys. Lett. 1987 50 851
33. S. Nam O. Byungsung K. Lee Growth and Structural Properties of ZnS/GaAs and ZnS/GaP Epilayers by Hot-Wall Epitaxy J. Korean Phys. Soc. 1998 33 309 312
34. S.-Y. Lien B.-R. Wu J.-C. Liu D.-S. Wuu Fabrication and characteristics of n-Si/c-Si/p-Si heterojunction solar cells using hot-wire CVD Thin Solid Films 2008 516 747 750
35. D. Pysch M. Bivour M. Hermle S. W. Glunz Amorphous silicon carbide heterojunction solar cells on p-type substrates Thin Solid Films 2011 519 2550 2554
36. N. A. Kotulak, Growth And Analysis Of Gallium Phosphide On Silicon For Very High Efficiency Solar Cell, 2011
37. E. García-Tabarés and I. Garcia, Integration of III-V materials on silicon substrates for multi-junction solar cell applications, Proc. 8th Spanish Conf. Electron Devices, 2011, http://ieeexplore.ieee.org/xpls/ abs-all.jsp?arnumber=5744190
38. D. W. Palmer, Semiconductors Information, 2006, www.semiconductors.co.uk
39. N. U. M. Ber Electrical and Optical Properties of Amorphous Germanium Phys. Rev. 1967 154 750
40. K. Nakada and M. Konagai, Application of intrinsic amorphous silicon oxide films as passivation layers for textured heterojunction solar cell, 27th Eur. Photovolt. Sol. Energy Conf. Exhib., 2012, 1616-1618
41. L. Magafas Electrical properties of a-SiC/c-Si(p) heterojunctions Semicond. Sci. Technol. 1992 7 1363