메뉴 건너뛰기




Volumn 6, Issue 12, 2014, Pages 9524-9529

High performance organic nonvolatile flash memory transistors with high-resolution reduced graphene oxide patterns as a floating gate

Author keywords

charge trapping layers; micropatterning; nonvolatile memory devices; organic devices; reduced graphene oxide; thin films

Indexed keywords

NONVOLATILE STORAGE; THIN FILMS;

EID: 84903525868     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am501909v     Document Type: Article
Times cited : (20)

References (30)
  • 1
    • 84869399133 scopus 로고    scopus 로고
    • Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation
    • Hwang, S. K.; Bae, I.; Kim, R. H.; Park, C. Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation Adv. Mater. 2012, 24, 5910-5914
    • (2012) Adv. Mater. , vol.24 , pp. 5910-5914
    • Hwang, S.K.1    Bae, I.2    Kim, R.H.3    Park, C.4
  • 2
    • 34547346804 scopus 로고    scopus 로고
    • Nonvolatile Memory Elements Based on Organic Materials
    • Scott, J. C.; Bozano, L. D. Nonvolatile Memory Elements Based on Organic Materials Adv. Mater. 2007, 19, 1452-1463
    • (2007) Adv. Mater. , vol.19 , pp. 1452-1463
    • Scott, J.C.1    Bozano, L.D.2
  • 3
    • 21644435627 scopus 로고    scopus 로고
    • Polyaniline Nanofiber/Gold Nanoparticle Nonvolatile Memory
    • Tseng, R. J.; Huang, J.; Ouyang, J.; Kaner, R. B.; Yang, Y. Polyaniline Nanofiber/Gold Nanoparticle Nonvolatile Memory Nano Lett. 2005, 5, 1077-1080
    • (2005) Nano Lett. , vol.5 , pp. 1077-1080
    • Tseng, R.J.1    Huang, J.2    Ouyang, J.3    Kaner, R.B.4    Yang, Y.5
  • 4
    • 33846181640 scopus 로고    scopus 로고
    • Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret
    • Baeg, K. J.; Noh, Y. Y.; Ghim, J.; Kang, S. J.; Lee, H.; Kim, D. Y. Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret Adv. Mater. 2006, 18, 3179-3183
    • (2006) Adv. Mater. , vol.18 , pp. 3179-3183
    • Baeg, K.J.1    Noh, Y.Y.2    Ghim, J.3    Kang, S.J.4    Lee, H.5    Kim, D.Y.6
  • 5
    • 0036469615 scopus 로고    scopus 로고
    • Organic Field-Effect Transistors with Podlarizable Gate Insulators
    • Katz, H. E.; Hong, X. M.; Dodabalapur, A.; Sarpeshkar, R. Organic Field-Effect Transistors with Podlarizable Gate Insulators J. Appl. Phys. 2002, 91, 1572-1576
    • (2002) J. Appl. Phys. , vol.91 , pp. 1572-1576
    • Katz, H.E.1    Hong, X.M.2    Dodabalapur, A.3    Sarpeshkar, R.4
  • 6
    • 84899120748 scopus 로고    scopus 로고
    • π-Conjugation-Interrupted Hyperbranched Polymer Electrets for Organic Nonvolatile Transistor Memory Devices
    • Lin, J.; Li, W.; Yu, Z.; Yi, M.; Ling, H.; Xie, L.; Li, S.; Huang, W. π-Conjugation-Interrupted Hyperbranched Polymer Electrets for Organic Nonvolatile Transistor Memory Devices J. Mater. Chem.C 2014, 2, 3738-3743
    • (2014) J. Mater. Chem.C , vol.2 , pp. 3738-3743
    • Lin, J.1    Li, W.2    Yu, Z.3    Yi, M.4    Ling, H.5    Xie, L.6    Li, S.7    Huang, W.8
  • 7
    • 66449090458 scopus 로고    scopus 로고
    • Non-Volatile Ferroelectric Poly(vinylidene fluoride- co -trifluoroethylene) Memory Based on a Single-Crystalline Tri- Isopropylsilylethynyl Pentacene Field-Effect Transistor
    • Kang, S. J.; Bae, I.; Park, Y. J.; Park, T. H.; Sung, J.; Yoon, S. C.; Kim, K. H.; Choi, D. H.; Park, C. Non-Volatile Ferroelectric Poly(vinylidene fluoride- co -trifluoroethylene) Memory Based on a Single-Crystalline Tri-Isopropylsilylethynyl Pentacene Field-Effect Transistor Adv. Funct. Mater. 2009, 19, 1609-1616
    • (2009) Adv. Funct. Mater. , vol.19 , pp. 1609-1616
    • Kang, S.J.1    Bae, I.2    Park, Y.J.3    Park, T.H.4    Sung, J.5    Yoon, S.C.6    Kim, K.H.7    Choi, D.H.8    Park, C.9
  • 9
    • 54949148764 scopus 로고    scopus 로고
    • Non-Volatile Organic Memory Applications Enabled by in-Situ Synthesis of Gold Nanoparticles in a Self-Assembled Block Copolymer
    • Leong, W. L.; Lee, P. S.; Lohani, A.; Lam, Y. M.; Chen, T.; Zhang, S.; Dodabalapur, A.; Mhaisalkar, S. G. Non-Volatile Organic Memory Applications Enabled by in-Situ Synthesis of Gold Nanoparticles in a Self-Assembled Block Copolymer Adv. Mater. 2008, 20, 2325-2331
    • (2008) Adv. Mater. , vol.20 , pp. 2325-2331
    • Leong, W.L.1    Lee, P.S.2    Lohani, A.3    Lam, Y.M.4    Chen, T.5    Zhang, S.6    Dodabalapur, A.7    Mhaisalkar, S.G.8
  • 10
    • 77955586213 scopus 로고    scopus 로고
    • Flexible Organic Transistor Memory Devices
    • Kim, S. J.; Lee, J. S. Flexible Organic Transistor Memory Devices Nano Lett. 2010, 10, 2884-2890
    • (2010) Nano Lett. , vol.10 , pp. 2884-2890
    • Kim, S.J.1    Lee, J.S.2
  • 11
    • 75649118191 scopus 로고    scopus 로고
    • Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
    • Talapin, D. V.; Lee, J. S.; Kovalenko, M. V.; Shevchenko, E. V. Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications Chem. Rev. 2010, 110, 389-458
    • (2010) Chem. Rev. , vol.110 , pp. 389-458
    • Talapin, D.V.1    Lee, J.S.2    Kovalenko, M.V.3    Shevchenko, E.V.4
  • 12
    • 77955152124 scopus 로고    scopus 로고
    • Graphene Oxide Nanosheets Based Organic Field Effect Transistor for Nonvolatile Memory Applications
    • Kim, T. W.; Gao, Y.; Acton, O.; Yip, H. L.; Ma, H.; Chen, H.; Jen, A. K. Y. Graphene Oxide Nanosheets Based Organic Field Effect Transistor for Nonvolatile Memory Applications Appl. Phys. Lett. 2010, 97, 023310
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 023310
    • Kim, T.W.1    Gao, Y.2    Acton, O.3    Yip, H.L.4    Ma, H.5    Chen, H.6    Jen, A.K.Y.7
  • 13
    • 77951190481 scopus 로고    scopus 로고
    • Wide Memory Window in Graphene Oxide Charge Storage Nodes
    • Wang, S.; Pu, J.; Chan, D. S. H.; Cho, B. J.; Loh, K. P. Wide Memory Window in Graphene Oxide Charge Storage Nodes Appl. Phys. Lett. 2010, 96, 143109
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 143109
    • Wang, S.1    Pu, J.2    Chan, D.S.H.3    Cho, B.J.4    Loh, K.P.5
  • 14
    • 84870944457 scopus 로고    scopus 로고
    • Reduced Graphene Oxide Based Flexible Organic Charge Trap Memory Devices
    • Rani, A.; Song, J. M.; Lee, M. J.; Lee, J. S. Reduced Graphene Oxide Based Flexible Organic Charge Trap Memory Devices Appl. Phys. Lett. 2012, 101, 233308
    • (2012) Appl. Phys. Lett. , vol.101 , pp. 233308
    • Rani, A.1    Song, J.M.2    Lee, M.J.3    Lee, J.S.4
  • 15
    • 77953494810 scopus 로고    scopus 로고
    • Chemically Derived Graphene Oxide: Towards Large-Area Thin-Film Electronics and Optoelectronics
    • Eda, G.; Chhowalla, M. Chemically Derived Graphene Oxide: Towards Large-Area Thin-Film Electronics and Optoelectronics Adv. Mater. 2010, 22, 2392-2415
    • (2010) Adv. Mater. , vol.22 , pp. 2392-2415
    • Eda, G.1    Chhowalla, M.2
  • 16
    • 84881488665 scopus 로고    scopus 로고
    • Non-Volatile Hybrid Memory Devices with Excellent Reliability
    • Chung, D. S.; Kang, I.; Kwon, S. K.; Kim, Y. H. Non-Volatile Hybrid Memory Devices with Excellent Reliability RSC Adv. 2013, 3, 13156-13162
    • (2013) RSC Adv. , vol.3 , pp. 13156-13162
    • Chung, D.S.1    Kang, I.2    Kwon, S.K.3    Kim, Y.H.4
  • 17
  • 18
    • 84863063282 scopus 로고    scopus 로고
    • Microlitre Scale Solution Processing for Controlled, Rapid Fabrication of Chemically Derived Graphene Thin Films
    • Ko, Y. U.; Cho, S.; Choi, K. S.; Park, Y.; Kim, S. T.; Kim, N. H.; Kim, S. Y.; Chang, S. T. Microlitre Scale Solution Processing for Controlled, Rapid Fabrication of Chemically Derived Graphene Thin Films J. Mater. Chem. 2012, 22, 3606-3613
    • (2012) J. Mater. Chem. , vol.22 , pp. 3606-3613
    • Ko, Y.U.1    Cho, S.2    Choi, K.S.3    Park, Y.4    Kim, S.T.5    Kim, N.H.6    Kim, S.Y.7    Chang, S.T.8
  • 19
    • 84873687774 scopus 로고    scopus 로고
    • Surface Energy Engineered, High-Resolution Micropatterning of Solution-Processed Reduced Graphene Oxide Thin Films
    • Kim, N. H.; Kim, B. J.; Ko, Y.; Cho, J. H.; Chang, S. T. Surface Energy Engineered, High-Resolution Micropatterning of Solution-Processed Reduced Graphene Oxide Thin Films Adv. Mater. 2013, 25, 894-898
    • (2013) Adv. Mater. , vol.25 , pp. 894-898
    • Kim, N.H.1    Kim, B.J.2    Ko, Y.3    Cho, J.H.4    Chang, S.T.5
  • 20
    • 48249136250 scopus 로고    scopus 로고
    • Micropatterning of Thin P3HT Films via Plasma Enhanced Polymer Transfer Printing
    • Kim, H.; Yoon, B.; Sung, J.; Choi, D. G.; Park, C. Micropatterning of Thin P3HT Films via Plasma Enhanced Polymer Transfer Printing J. Mater. Chem. 2008, 18, 3489-3495
    • (2008) J. Mater. Chem. , vol.18 , pp. 3489-3495
    • Kim, H.1    Yoon, B.2    Sung, J.3    Choi, D.G.4    Park, C.5
  • 21
    • 0014438345 scopus 로고
    • Charge Storage Model for Variable Threshold FET Memory Element
    • Sewell, F. A. Charge Storage Model for Variable Threshold FET Memory Element Appl. Phys. Lett. 1969, 14, 45
    • (1969) Appl. Phys. Lett. , vol.14 , pp. 45
    • Sewell, F.A.1
  • 22
    • 0017494254 scopus 로고
    • Charge Transfer by Direct Tunneling in Thin-Oxide Memory Transistors
    • Ferris-Prabhu, A. V. Charge Transfer by Direct Tunneling in Thin-Oxide Memory Transistors IEEE Trans. Electron. Dev. 1977, 24, 524-530
    • (1977) IEEE Trans. Electron. Dev. , vol.24 , pp. 524-530
    • Ferris-Prabhu, A.V.1
  • 23
    • 84863155473 scopus 로고    scopus 로고
    • Organic Nonvolatile Memory Devices with Charge Trapping Multilayer Graphene Film
    • Ji, Y.; Choe, M.; Cho, B.; Song, S.; Yoon, J.; Ko, H. C.; Lee, T. Organic Nonvolatile Memory Devices with Charge Trapping Multilayer Graphene Film Nanotechnol. 2012, 23, 105202
    • (2012) Nanotechnol. , vol.23 , pp. 105202
    • Ji, Y.1    Choe, M.2    Cho, B.3    Song, S.4    Yoon, J.5    Ko, H.C.6    Lee, T.7
  • 24
    • 84890526969 scopus 로고    scopus 로고
    • Nonvolatile Memory Devices Based on Self-Assembled Nanocrystals
    • Lee, J. S. Nonvolatile Memory Devices Based on Self-Assembled Nanocrystals Physica E 2013, 51, 94-103
    • (2013) Physica E , vol.51 , pp. 94-103
    • Lee, J.S.1
  • 25
    • 80052523231 scopus 로고    scopus 로고
    • Progress in Non-Volatile Memory Devices Based on Nanostructured Materials and Nanofabrication
    • Lee, J. S. Progress in Non-Volatile Memory Devices Based on Nanostructured Materials and Nanofabrication J. Mater. Chem. 2011, 21, 14097-14112
    • (2011) J. Mater. Chem. , vol.21 , pp. 14097-14112
    • Lee, J.S.1
  • 26
    • 84867235740 scopus 로고    scopus 로고
    • Role of Tunneling Layer in Graphene-Oxide Based Organic Nonvolatile Memory Transistors
    • Park, Y.; Gupta, D.; Lee, C.; Hong, Y. Role of Tunneling Layer in Graphene-Oxide Based Organic Nonvolatile Memory Transistors Org. Electron. 2012, 13, 2887-2892
    • (2012) Org. Electron. , vol.13 , pp. 2887-2892
    • Park, Y.1    Gupta, D.2    Lee, C.3    Hong, Y.4
  • 27
    • 77955586213 scopus 로고    scopus 로고
    • Flexible Organic Transistor Memory Devices
    • Kim, S. J.; Lee, J. S. Flexible Organic Transistor Memory Devices Nano Lett. 2010, 10, 2884-2890
    • (2010) Nano Lett. , vol.10 , pp. 2884-2890
    • Kim, S.J.1    Lee, J.S.2
  • 30
    • 84873627210 scopus 로고    scopus 로고
    • Layer-by-Layer-Assembled Reduced Graphene Oxide/Gold Nanoparticle Hybrid Double-Floating-Gate Structure for Low-Voltage Flexible Flash Memory
    • Han, S. T.; Zhou, Y.; Wang, C.; He, L.; Zhang, W.; Roy, V. A. L. Layer-by-Layer-Assembled Reduced Graphene Oxide/Gold Nanoparticle Hybrid Double-Floating-Gate Structure for Low-Voltage Flexible Flash Memory Adv. Mater. 2013, 25, 872-877
    • (2013) Adv. Mater. , vol.25 , pp. 872-877
    • Han, S.T.1    Zhou, Y.2    Wang, C.3    He, L.4    Zhang, W.5    Roy, V.A.L.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.