A normally-off microcontroller unit with an 85% power overhead reduction based on crystalline indium gallium zinc oxide field effect transistors

Japanese Journal of Applied Physics

Volumn 53, Issue 4 SPEC. ISSUE, 2014, Pages

  Ohshima, Kazuaki ^a   Kobayashi, Hidetomo ^a   Nishijima, Tatsuji ^a   Yoneda, Seiichi ^a   Tomatsu, Hiroyuki ^a   Maeda, Shuhei ^a   Tsukida, Kazuki ^a   Takahashi, Kei ^a   Sato, Takehisa ^a   Watanabe, Kazunori ^a   Yamamoto, Ro ^a   Kozuma, Munehiro ^a   Aoki, Takeshi ^a   Yamade, Naoto ^a   Ieda, Yoshinori ^a   Miyairi, Hidekazu ^a   Atsumi, Tomoaki ^a   Shionoiri, Yutaka ^a   Kato, Kiyoshi ^a   Maehashi, Yukio ^a   Koyama, Jun ^a   Yamazaki, Shunpei ^a   more..

^a SEMICONDUCTOR ENERGY LABORATORY CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; FIELD EFFECT TRANSISTORS; NETWORK MANAGEMENT;

CRYSTALLINE OXIDES; DISTRIBUTED METHODS; INDIUM GALLIUM ZINC OXIDES; MICROCONTROLLER UNIT; NORMALLY OFF; POWER OVERHEAD; RECOVERY METHODS; STATE-RETENTION;

COST REDUCTION;

EID: 84903302000     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.04EE02     Document Type: Conference Paper

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