Effect of Cu substrate roughness on growth of graphene domains at atmospheric pressure

Materials Letters

Volumn 131, Issue , 2014, Pages 138-140

  Wang, Bin ^a,b   Zhang, Hao Ran ^b   Zhang, Yan Hui ^b   Chen, Zhi Ying ^b   Jin, Zhi ^c   Liu, Xin Yu ^c   Hu, Li Zhong ^a   Yu, Guang Hui ^b  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Chemical vapor deposition; Defects; Graphene; SEM

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; COPPER; DEFECTS; FILM GROWTH; GRAIN BOUNDARIES; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SUBSTRATES;

COPPER SURFACE; CU SUBSTRATE; ELECTRONIC TRANSPORT PROPERTIES; GRAPHENE FILMS; MECHANICAL METHODS; NUCLEATION SEEDS; NUMBER DENSITY;

GRAPHENE;

EID: 84902651780     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2014.05.155     Document Type: Article

References (22)

1. Y.M. Lin, C. Dimitrakopoulos, K.A. Jenkins, D.B. Farmer, H.Y. Chiu, and A. Grill et al. Science 327 2010 662
2. K.S. Kim, Y. Zhao, H. Jang, S.Y. Lee, J.M. Kim, and K.S. Kim et al. Nature 457 2009 706 710
3. E. Loginova, N.C. Bartelt, P.J. Feibelman, and K.F. McCarty New J Phys 10 2008 093026
4. D. Usachov, A. Dobrotvorskii, A. Varykhalov, O. Rader, W. Gudat, and A. Shikin et al. Phys Rev B 2008 78
5. T. Oznuluer, E. Pince, E.O. Polat, O. Balci, O. Salihoglu, and C. Kocabas Appl Phys Lett 98 2011 183101
6. B. Wang, Y. Zhang, Z. Chen, Y. Wu, Z. Jin, and X. Liu et al. Mater Lett 93 2013 165 168
7. X. Li, C.W. Magnuson, A. Venugopal, J. An, J.W. Suk, and B. Han et al. Nano Lett 10 2010 4328 4334
8. X. Li, W. Cai, J. An, S. Kim, J. Nah, and D. Yang et al. Science 324 2009 1312 1314
9. L. Gao, W. Ren, J. Zhao, L. Ma, Z. Chen, and H. Cheng Appl Phys Lett 97 2010 183109
10. H. Song, S. Li, H. Miyazaki, S. Sato, A. Yamada, and N. Yokoyama et al. Sci Rep 2 2012 337
11. S. Bae, H. Kim, Y. Lee, X. Xu, J.S. Park, and Y. Zheng et al. Nat Nanotechnol 5 8 2010 574 578
12. K.S. Kim, Y. Zhao, H. Jang, S.Y. Lee, J.M. Kim, and K.S. Kim et al. Nature 457 7230 2009 706 710
13. S. Lee, K. Lee, and Z. Zhong Nano Lett 10 11 2010 4702 4707
14. G. Han, F. Gunes, J.J. Bae, E.S. Kim, S.J. Chae, and H.J. Shin et al. Nano Lett 11 10 2011 4144 4148
15. P.Y. Huang, C.S. Ruiz-Vargas, W.S. Whitney, M.P. Levendorf, J.W. Kevek, and D.A. Muller et al. Nature 469 7330 2011 389
16. J. Lahiri, Y. Lin, P. Bozkurt, I.I. Oleynik, and M. Batzill Nat Nanotechnol 5 5 2010 326 329
17. Q. Yu, L.A. Jauregui, W. Wu, R. Colby, J.F. Tian, and Z. Su et al. Nat Mater 10 6 2011 443 449
18. X. Li, C.W. Magnuson, A. Venugopal, J.H. An, J.W. Suk, and B. Han et al. Nano Lett 10 11 2010 4328 4334
19. H. Wang, G.Z. Wang, P.F. Bao, S.L. Yang, W. Zhu, and X. Xie et al. J Am Chem Soc 134 8 2012 3627 3630
20. S. Nie, J.M. Wofford, N.C. Bartelt, O.D. Dubon, and K.F. McCarty Phys Rev B 84 2011 155425
21. J.F. Gao, J. Yip, J.J. Zhao, B.I. Yakobson, and F. Ding J Am Chem Soc 133 13 2011 5009 5015
22. Y. Zhang, Z. Chen, B. Wang, Y. Wu, Z. Jin, and X. Liu et al. Mater Lett 96 2013 149 151