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Materials Letters

Volumn 93, Issue , 2013, Pages 165-168

High quality graphene grown on single-crystal Mo(110) thin films

(8) Wang, Bin a,b Zhang, Yanhui b Chen, Zhiying b Wu, Yuanwen b Jin, Zhi c Liu, Xinyu c Hu, Lizhong a Yu, Guanghui b

a DALIAN UNIVERSITY OF TECHNOLOGY (China)

b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

c INSTITUTE OF MICROELECTRONICS (China)

Author keywords

Chemical vapor deposition; Graphene; Raman; Segregation

Indexed keywords

AS-GROWN; CARBON SPECIES; COOLING RATES; GRAPHENE GROWTH; GROWTH TIME; HIGH QUALITY; MICRO RAMAN SPECTROSCOPY; MO(110); RAMAN; SEGREGATION PROCESS;

CHEMICAL VAPOR DEPOSITION; COOLING; FILM GROWTH; GRAPHENE; METHANE; RAMAN SPECTROSCOPY; SEGREGATION (METALLOGRAPHY); VAPORS; X RAY DIFFRACTION;

MOLYBDENUM;

EID: 84871762265 PISSN: 0167577X EISSN: None Source Type: Journal
DOI: 10.1016/j.matlet.2012.11.088 Document Type: Article

Times cited : (13)

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