Controllable growth of millimeter-size graphene domains on Cufoil

Materials Letters

Volumn 96, Issue , 2013, Pages 149-151

  Zhang, Y H ^a   Chen, Z Y ^a   Wang, B ^a,b   Wu, Y W ^a   Jin, Z ^c   Liu, X Y ^c   Yu, G H ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^c INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Carbon materials; Chemical vapor deposition; Graphene domain; Millimeter size; Raman

Indexed keywords

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; CARBON MATERIAL; CHEMICAL VAPOR DEPOSITIONS (CVD); CONTROLLABLE GROWTH; CRYSTAL QUALITIES; ELECTRICAL AND MECHANICAL PROPERTIES; MEASUREMENTS OF; MILLIMETER-SIZE; NUCLEATION DENSITIES; POLYCRYSTALLINE; RAMAN;

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; GROWTH TEMPERATURE; MECHANICAL PROPERTIES; METHANE; MONOLAYERS; NUCLEATION; OPTICAL MICROSCOPY; VAPORS;

GRAPHENE;

EID: 84873689925     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2013.01.024     Document Type: Article

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