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Journal of Applied Physics

Volumn 115, Issue 21, 2014, Pages

Detailed understanding of the excitation-intensity dependent photoluminescence of ZnO materials: Role of defects

(3) Prasada Rao, T a,b Goswami, G K a Nanda, K K a

a INDIAN INSTITUTE OF SCIENCE (India)

b K L UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; LASER EXCITATION; PHOTOLUMINESCENCE;

BAND-TO-BAND TRANSITION; DEFECT LEVELS; DOMINANT FACTOR; EXCITATION INTENSITY; HEATING EFFECT; LASER POWER; LASER-INDUCED HEATING; ROOM TEMPERATURE;

ZINC OXIDE;

EID: 84902596828 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4881779 Document Type: Article

Times cited : (22)

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