Electric double layer transistors with ferroelectric BaTiO3 channels

Applied Physics Letters

Volumn 104, Issue 22, 2014, Pages

  Ito, M ^a,b   Matsubara, Y ^a,b   Kozuka, Y ^c   Takahashi, K S ^b   Kagawa, F ^b   Ye, J T ^d   Iwasa, Y ^b,c   Ueno, K ^c   Tokura, Y ^b,c   Kawasaki, M ^b,c  

^a TOHOKU UNIVERSITY   (Japan)

^b RIKEN Center for Emergent Matter Science   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMISTRY; FERROELECTRIC MATERIALS; IONIC LIQUIDS;

BULK SINGLE CRYSTALS; ELECTRIC DOUBLE-LAYER TRANSISTORS; FERROELECTRIC BATIO; ORTHORHOMBIC TO RHOMBOHEDRAL TRANSITIONS; RESISTANCE INCREASE; SINGLE-DOMAIN STRUCTURE; TEMPERATURE DEPENDENCE; TRANSISTOR OPERATION;

BARIUM COMPOUNDS;

EID: 84902486553     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4881059     Document Type: Article

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