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Volumn 9, Issue 6, 2014, Pages 453-458

Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC INSULATING MATERIALS; ELECTRIC SWITCHES; METAL INSULATOR BOUNDARIES; METALLIZING; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSITION METAL OXIDES; TRANSITION METALS;

EID: 84902279057     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2014.71     Document Type: Article
Times cited : (105)

References (37)
  • 3
    • 0000520882 scopus 로고
    • Crystal structure of the low-temperature antiferromagnetic phase of V2O3
    • Dernier, P. D. &Marezio, M. Crystal structure of the low-temperature antiferromagnetic phase of V2O3. Phys. Rev. B 2, 3771-3776 (1970).
    • (1970) Phys. Rev. B , vol.2 , pp. 3771-3776
    • Dernier, P.D.1    Marezio, M.2
  • 5
    • 33645789117 scopus 로고    scopus 로고
    • Structural precursor to the metal-insulator transition in V2O3
    • Pfalzer, P., Obermeier, G., Klemm, M., Horn, S. &denBoer, M. L. Structural precursor to the metal-insulator transition in V2O3. Phys. Rev. B 73, 144106 (2006).
    • (2006) Phys. Rev. B , vol.73 , pp. 144106
    • Pfalzer, P.1    Obermeier, G.2    Klemm, M.3    Horn, S.4    Denboer, M.L.5
  • 6
    • 33144470199 scopus 로고    scopus 로고
    • Orbital-selective insulator-metal transition in V2O3 under external pressure
    • Laad, M. S., Craco, L. &Muller-Hartmann, E. Orbital-selective insulator-metal transition in V2O3 under external pressure. Phys. Rev. B 73, 045109 (2006).
    • (2006) Phys. Rev. B , vol.73 , pp. 045109
    • Laad, M.S.1    Craco, L.2    Muller-Hartmann, E.3
  • 7
    • 75949121864 scopus 로고    scopus 로고
    • Inequivalent routes across the Mott transition in V2O3 explored by X-ray absorption
    • Rodolakis, F. et al. Inequivalent routes across the Mott transition in V2O3 explored by X-ray absorption. Phys. Rev. Lett. 104, 047401 (2010).
    • (2010) Phys. Rev. Lett. , vol.104 , pp. 047401
    • Rodolakis, F.1
  • 8
    • 0035805841 scopus 로고    scopus 로고
    • Mott-Hubbard metal-insulator transition in paramagnetic V2O3: An LDAþDMFT(QMC) study
    • Held, K., Keller, G., Eyert, V., Vollhardt, D. &Anisimov, V. I. Mott-Hubbard metal-insulator transition in paramagnetic V2O3: An LDAþDMFT(QMC) study. Phys. Rev. Lett. 86, 5345-5348 (2001).
    • (2001) Phys. Rev. Lett. , vol.86 , pp. 5345-5348
    • Held, K.1    Keller, G.2    Eyert, V.3    Vollhardt, D.4    Anisimov, V.I.5
  • 9
    • 0042916408 scopus 로고    scopus 로고
    • Electric field effect in correlated oxide systems
    • Ahn, C. H., Triscone, J-M. &Mannhart, J. Electric field effect in correlated oxide systems. Nature 424, 1015-1018 (2003).
    • (2003) Nature , vol.424 , pp. 1015-1018
    • Ahn, C.H.1    Triscone, J.-M.2    Mannhart, J.3
  • 10
    • 36049053305 scopus 로고
    • Reversible electrical switching phenomena in disordered structures
    • Ovshinsky, S. R. Reversible electrical switching phenomena in disordered structures. Phys. Rev. Lett. 21, 1450-1453 (1968).
    • (1968) Phys. Rev. Lett. , vol.21 , pp. 1450-1453
    • Ovshinsky, S.R.1
  • 11
    • 0018547645 scopus 로고
    • Thermal instability\-The precursor to switching in inhomogeneous thin films
    • Shaw, M. P. Thermal instability\-The precursor to switching in inhomogeneous thin films. IEEE Trans. Electron. Dev. ED-26, 1766-1771 (1979).
    • (1979) IEEE Trans. Electron. Dev , vol.ED26 , pp. 1766-1771
    • Shaw, M.P.1
  • 12
    • 35949040018 scopus 로고
    • The mechanism of threshold switching in amorphous alloys
    • Adler, D., Henisch, H. K. &Mott, N. The mechanism of threshold switching in amorphous alloys. Rev. Mod. Phys. 50, 209-220 (1978).
    • (1978) Rev. Mod. Phys. , vol.50 , pp. 209-220
    • Adler, D.1    Henisch, H.K.2    Mott, N.3
  • 13
    • 54449102164 scopus 로고    scopus 로고
    • Field-induced metal-insulator transition and switching phenomenon in correlated insulators
    • Sugimoto, N., Onoda, S. &Nagaosa, N. Field-induced metal-insulator transition and switching phenomenon in correlated insulators. Phys. Rev. B 78, 155104 (2008).
    • (2008) Phys. Rev. B , vol.78 , pp. 155104
    • Sugimoto, N.1    Onoda, S.2    Nagaosa, N.3
  • 14
    • 77957568831 scopus 로고    scopus 로고
    • Dielectric breakdown of Mott insulators in dynamical mean-field theory
    • Eckstein, M., Oka, T. &Werner, P. Dielectric breakdown of Mott insulators in dynamical mean-field theory. Phys. Rev. Lett. 105, 146404 (2010).
    • (2010) Phys. Rev. Lett. , vol.105 , pp. 146404
    • Eckstein, M.1    Oka, T.2    Werner, P.3
  • 15
    • 78649747485 scopus 로고    scopus 로고
    • Non-equilibrium electronic transport in a onedimensional Mott insulator
    • Heidrich-Meisner, F. et al. Non-equilibrium electronic transport in a onedimensional Mott insulator. Phys. Rev. B 82, 205110 (2010).
    • (2010) Phys. Rev. B , vol.82 , pp. 205110
    • Heidrich-Meisner, F.1
  • 16
    • 0034295232 scopus 로고    scopus 로고
    • Electrical switching and Mott transition in VO2
    • Stefanovich, G., Pergament, A. &Stefanovich, D. Electrical switching and Mott transition in VO2. J. Phys. 12, 8837-8845 (2000).
    • (2000) J. Phys. , vol.12 , pp. 8837-8845
    • Stefanovich, G.1    Pergament, A.2    Stefanovich, D.3
  • 17
    • 34648815899 scopus 로고    scopus 로고
    • Time-dependent characteristics of electric field-induced metal-insulator transition of planer VO2/c-Al2O3 structure
    • Okimura, K. &Sakai, J. Time-dependent characteristics of electric field-induced metal-insulator transition of planer VO2/c-Al2O3 structure. Jpn J. Appl. Phys. 46, L813-L816 (2007).
    • (2007) Jpn J. Appl. Phys. , vol.46
    • Okimura, K.1    Sakai, J.2
  • 18
    • 68949183506 scopus 로고    scopus 로고
    • On the triggering mechanism for the metal-insulator transition in thin film VO2 devices: Electric field versus thermal effects
    • Gopalakrishnan, G., Ruzmetov, D. &Ramanathan, S. On the triggering mechanism for the metal-insulator transition in thin film VO2 devices: electric field versus thermal effects. J. Mater. Sci. 44, 5345-5353 (2009).
    • (2009) J. Mater. Sci. , vol.44 , pp. 5345-5353
    • Gopalakrishnan, G.1    Ruzmetov, D.2    Ramanathan, S.3
  • 19
    • 80655141496 scopus 로고    scopus 로고
    • Avalanche breakdown in microscale VO2 structures
    • Zhong, X., Zhang, X., Gupta, A. &LeClair, P. Avalanche breakdown in microscale VO2 structures. J. Appl. Phys. 110, 084516 (2011).
    • (2011) J. Appl. Phys. , vol.110 , pp. 084516
    • Zhong, X.1    Zhang, X.2    Gupta, A.3    Leclair, P.4
  • 20
    • 84873878537 scopus 로고    scopus 로고
    • Role of thermal heating on the voltage induced insulator- metal transition in VO2
    • Zimmers, A. et al. Role of thermal heating on the voltage induced insulator- metal transition in VO2. Phys. Rev. Lett. 110, 056601 (2013).
    • (2013) Phys. Rev. Lett. , vol.110 , pp. 056601
    • Zimmers, A.1
  • 21
    • 0043053680 scopus 로고
    • Filamentary conduction in VO2 coplanar thin-film devices
    • Duchene, J., Terraillon, M., Pailly, P. &Adam, G. Filamentary conduction in VO2 coplanar thin-film devices. Appl. Phys. Lett. 19, 115-117 (1971).
    • (1971) Appl. Phys. Lett. , vol.19 , pp. 115-117
    • Duchene, J.1    Terraillon, M.2    Pailly, P.3    Adam, G.4
  • 22
    • 47349120574 scopus 로고    scopus 로고
    • Effect of pressure on the electric-field-induced resistance switching of VO2 planar-type junctions
    • Sakai, J. &Kurisu, M. Effect of pressure on the electric-field- induced resistance switching of VO2 planar-type junctions. Phys. Rev. B 78, 033106 (2008).
    • (2008) Phys. Rev. B , vol.78 , pp. 033106
    • Sakai, J.1    Kurisu, M.2
  • 23
    • 84255171548 scopus 로고    scopus 로고
    • Electrically controlled metal-insulator transition process in VO2 thin films
    • Zhao, Y., Hao, J., Chen, C. &Fan, Z. Electrically controlled metal-insulator transition process in VO2 thin films. J. Phys. 24, 035601 (2012).
    • (2012) J. Phys. , vol.24 , pp. 035601
    • Zhao, Y.1    Hao, J.2    Chen, C.3    Fan, Z.4
  • 24
    • 79954590779 scopus 로고    scopus 로고
    • Increased metal-insulator transition temperatures in epitaxial thin films of V2O3 prepared in reduced oxygen environments
    • Brockman, J. et al. Increased metal-insulator transition temperatures in epitaxial thin films of V2O3 prepared in reduced oxygen environments. Appl. Phys. Lett. 98, 152105 (2011).
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 152105
    • Brockman, J.1
  • 25
    • 84864645365 scopus 로고    scopus 로고
    • Substrate-induced disorder in V2O3 thin films grown on annealed c-plane sapphire substrates
    • Brockman, J., Samant, M. G., Roche, K. P. &Parkin, S. S. P. Substrate-induced disorder in V2O3 thin films grown on annealed c-plane sapphire substrates. Appl. Phys. Lett. 101, 051606 (2012).
    • (2012) Appl. Phys. Lett. , vol.101 , pp. 051606
    • Brockman, J.1    Samant, M.G.2    Roche, K.P.3    Parkin, S.S.P.4
  • 27
    • 42549086697 scopus 로고    scopus 로고
    • Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film
    • Lee, Y. W. et al. Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film. Appl. Phys. Lett. 92, 162903 (2008).
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 162903
    • Lee, Y.W.1
  • 28
    • 26344462977 scopus 로고
    • On pre-breakdown phenomena in insulators and electronic semi-conductors
    • Frenkel, J. On pre-breakdown phenomena in insulators and electronic semi-conductors. Phys. Rev. 54, 647-648 (1938).
    • (1938) Phys. Rev. , vol.54 , pp. 647-648
    • Frenkel, J.1
  • 29
    • 0001245953 scopus 로고
    • Electronic properties of amorphous dielectric films
    • Jonscher, A. K. Electronic properties of amorphous dielectric films. Thin Solid Films 1, 213-234 (1967).
    • (1967) Thin Solid Films , vol.1 , pp. 213-234
    • Jonscher, A.K.1
  • 31
    • 25744440684 scopus 로고
    • Low temperature specific heat of (V1-xCrx)2O3 and (V1-xAlx)2O3
    • Wenger, L. E. &Keesom, P. H. Low temperature specific heat of (V1-xCrx)2O3 and (V1-xAlx)2O3. Phys. Rev. B 12, 5288-5296 (1975).
    • (1975) Phys. Rev. B , vol.12 , pp. 5288-5296
    • Wenger, L.E.1    Keesom, P.H.2
  • 32
    • 84863987595 scopus 로고    scopus 로고
    • Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial
    • Liu, M. et al. Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial. Nature 487, 345-348 (2012).
    • (2012) Nature , vol.487 , pp. 345-348
    • Liu, M.1
  • 33
    • 37349052805 scopus 로고    scopus 로고
    • Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging
    • Qazilbash, M. M. et al. Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging. Science 318, 1750-1753 (2007).
    • (2007) Science , vol.318 , pp. 1750-1753
    • Qazilbash, M.M.1
  • 34
    • 0001631019 scopus 로고
    • Generation of subpicosecond electrical pulses on coplanar transmission lines
    • Ketchen, M. B. et al. Generation of subpicosecond electrical pulses on coplanar transmission lines. Appl. Phys. Lett. 48, 751-753 (1986).
    • (1986) Appl. Phys. Lett. , vol.48 , pp. 751-753
    • Ketchen, M.B.1
  • 35
    • 33748880986 scopus 로고    scopus 로고
    • (ed. Sakai K.) 1-30 (Topics in Applied Physics 97, Springer,)
    • Sakai, K. &Tani, M. in Terahertz Optoelectronics (ed. Sakai K.) 1-30 (Topics in Applied Physics 97, Springer, 2005).
    • (2005) Terahertz Optoelectronics
    • Sakai, K.1    Tani, M.2
  • 36
    • 27144479804 scopus 로고    scopus 로고
    • Band-selective measurements of electron dynamics in VO2 using femtosecond near-edge X-ray absorption
    • Cavalleri, A. et al. Band-selective measurements of electron dynamics in VO2 using femtosecond near-edge X-ray absorption. Phys. Rev. Lett. 95, 067405 (2005).
    • (2005) Phys. Rev. Lett. , vol.95 , pp. 067405
    • Cavalleri, A.1
  • 37
    • 34548767643 scopus 로고    scopus 로고
    • Coherent structural dynamics and electronic correlations during an ultrafast insulator-to-metal phase transition in VO2
    • Kubler, C. et al. Coherent structural dynamics and electronic correlations during an ultrafast insulator-to-metal phase transition in VO2. Phys. Rev. Lett. 99, 116401 (2007).
    • (2007) Phys. Rev. Lett. , vol.99 , pp. 116401
    • Kubler, C.1


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