Defect formation energetics at the grain boundary in CuInSe2 using first-principles calculations

Journal of the Ceramic Society of Japan

Volumn 122, Issue 1426, 2014, Pages 469-472

  Yamaguchi, Hiroyuki ^a   Mizoguchi, Teruyasu ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

First principles calculation; Photovoltaic cell

Indexed keywords

DEFECTS; GRAIN BOUNDARIES; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; POINT DEFECTS; RELAXATION PROCESSES; SEMICONDUCTING SELENIUM COMPOUNDS; VACANCIES;

ANTI-SITE DEFECT; ATOMIC RELAXATION; DEFECT FORMATION; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; RICH CONDITIONS; SCHOTTKY DEFECTS; VACANCY FORMATION;

CALCULATIONS;

EID: 84901808461     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.122.469     Document Type: Conference Paper

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