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Volumn 443, Issue , 2014, Pages 125-129

Structural and electrical properties of Sn-doped Ga1.375In 0.625O3 with different doping concentrations

Author keywords

Doping concentration; Electrical properties; First principle; Structural properties

Indexed keywords

ATOMS; GALLIUM; STRUCTURAL PROPERTIES; TIN;

EID: 84901233743     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2014.01.043     Document Type: Article
Times cited : (6)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.