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Volumn 443, Issue , 2014, Pages 125-129
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Structural and electrical properties of Sn-doped Ga1.375In 0.625O3 with different doping concentrations
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Author keywords
Doping concentration; Electrical properties; First principle; Structural properties
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Indexed keywords
ATOMS;
GALLIUM;
STRUCTURAL PROPERTIES;
TIN;
BAND GAP NARROWING;
DOPING CONCENTRATION;
ELECTRON EFFECTIVE MASS;
FIRST PRINCIPLES;
FIRST-PRINCIPLE METHODS;
METALLIC CONDUCTIVITY;
SN-DOPED;
STRUCTURAL AND ELECTRICAL PROPERTIES;
ELECTRIC PROPERTIES;
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EID: 84901233743
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2014.01.043 Document Type: Article |
Times cited : (6)
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References (24)
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