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Volumn 255, Issue 11, 2009, Pages 6024-6027

Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al 2 O 3 (0 0 0 1) by MOCVD

Author keywords

Electrical and optical properties; MOCVD; Sn doped Ga 1.4 In 0.6 O 3 thin films

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CARRIER CONCENTRATION; CONDUCTIVE FILMS; FILM PREPARATION; GALLIUM COMPOUNDS; HALL MOBILITY; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; THIN FILMS;

EID: 60949089455     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.01.058     Document Type: Article
Times cited : (2)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.