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Volumn 255, Issue 11, 2009, Pages 6024-6027
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Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al 2 O 3 (0 0 0 1) by MOCVD
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Author keywords
Electrical and optical properties; MOCVD; Sn doped Ga 1.4 In 0.6 O 3 thin films
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Indexed keywords
ALUMINA;
ALUMINUM OXIDE;
CARRIER CONCENTRATION;
CONDUCTIVE FILMS;
FILM PREPARATION;
GALLIUM COMPOUNDS;
HALL MOBILITY;
INDIUM COMPOUNDS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL PROPERTIES;
SEMICONDUCTOR DOPING;
THIN FILMS;
ATOMIC RATIO;
ELECTRICAL AND OPTICAL PROPERTIES;
POLYCRYSTALLINE FILM;
SN CONCENTRATION;
SN DOPING;
SN-DOPED;
VISIBLE RANGE;
TIN COMPOUNDS;
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EID: 60949089455
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2009.01.058 Document Type: Article |
Times cited : (2)
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References (14)
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