Fabrication and characterization of gridded Pt/SiO2/Si MOS structure for hydrogen and hydrogen sulphide sensing

Materials Chemistry and Physics

Volumn 146, Issue 3, 2014, Pages 418-424

  Kumar, Vinod ^a   Sunny, ^a   Rawal, Ishpal ^b   Mishra, V N ^a   Dwivedi, R ^a   Das, R R ^a  

^a BANARAS HINDU UNIVERSITY   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

Adsorption; Interfaces; Microporous materials; Oxides; Thin films

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; CAPACITANCE; CAPACITORS; CHEMICAL DETECTION; DENSITY OF GASES; DIELECTRIC DEVICES; FABRICATION; FILMS; GAS DETECTORS; GAS SENSING ELECTRODES; GASES; HYDROGEN; HYDROGEN SULFIDE; INTERFACE STATES; INTERFACES (MATERIALS); MICROPOROUS MATERIALS; OXIDES; PHASE INTERFACES; PLATINUM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SILICON WAFERS; THERMAL EVAPORATION; THIN FILMS;

CAPACITOR STRUCTURES; FABRICATION AND CHARACTERIZATIONS; FIXED OXIDE CHARGES; GAS CONCENTRATION; GAS SENSING BEHAVIOR; INTERFACE STATE DENSITY; THERMAL EVAPORATION TECHNIQUE; THERMAL OXIDE LAYER;

MOS CAPACITORS;

EID: 84899934357     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2014.03.047     Document Type: Article

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