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Thin Solid Films

Volumn 559, Issue , 2014, Pages 100-104

Epitaxial growth and electronic structure of a layered zinc pnictide semiconductor, β-BaZn2As2

(6) Xiao, Zewen a Ran, Fan Yong a Hiramatsu, Hidenori a Matsuishi, Satoru a Hosono, Hideo a Kamiya, Toshio a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Band gap; Epitaxial growth; Hybrid functional calculation; Layered structure; Zinc pnictide

Indexed keywords

ATOMIC FORCE MICROSCOPY; BARIUM COMPOUNDS; CRYSTAL ATOMIC STRUCTURE; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; ENERGY GAP; EPITAXIAL FILMS; EPITAXIAL GROWTH; LANTHANUM COMPOUNDS; MAGNESIA; OXIDE MINERALS; SINGLE CRYSTALS; SUBSTRATES;

EPITAXIAL RELATIONSHIPS; FULL WIDTHS AT HALF MAXIMUMS; HIGH QUALITY EPITAXIAL FILMS; HYBRID FUNCTIONAL; LAYERED STRUCTURES; P TYPE SEMICONDUCTOR; PNICTIDES; STEP-AND-TERRACE STRUCTURES;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 84899552102 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2013.10.135 Document Type: Conference Paper

Times cited : (17)

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