Doping induced structural stability and electronic properties of GaN nanotubes

The Scientific World Journal

Volumn 2014, Issue , 2014, Pages

  Srivastava, Anurag ^a   Khan, Mohammad Irfan ^a,b   Tyagi, Neha ^a   Swaroop Khare, Purnima ^b  

^a ABV INDIAN INSTITUTE OF INFORMATION TECHNOLOGY AND MANAGEMENT   (India)

^b Rajiv Gandhi Proudyogiki Vishwavidyalaya   (India)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; GALLIUM NITRIDE NANOTUBE; MANGANESE; NANOTUBE; NITROGEN; UNCLASSIFIED DRUG; CARBON NANOTUBE; GALLIUM NITRIDE;

ARTICLE; ATOM; DENSITY FUNCTIONAL THEORY; ELECTRON; ENERGY; CHEMICAL STRUCTURE; CHEMISTRY; CONFORMATION; ELECTRIC CONDUCTIVITY;

ELECTRIC CONDUCTIVITY; GALLIUM; MANGANESE; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOTUBES, CARBON;

EID: 84898813893     PISSN: None     EISSN: 1537744X     Source Type: Journal    
DOI: 10.1155/2014/984591     Document Type: Article

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