Passivation of optically black silicon by atomic layer deposited Al 2O3

Energy Procedia

Volumn 38, Issue , 2013, Pages 862-865

  Otto, Martin ^a   Kroll, Matthias ^b   Käsebier, Thomas ^b   Ziegler, Johannes ^a   Sprafke, Alexander N ^a   Wehrspohn, Ralf B ^a,c  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^c FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

Author keywords

ALD; Black silicon; Nanostructures; Passivation

Indexed keywords

EID: 84898742353     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2013.07.357     Document Type: Conference Paper

References (14)

1. J. Oh, H.C. Yuan, and H.M. Branz. An 18.2%-efficient black-silicon solar cell achieved through control of carrier recombination in nanostructures, Nat. Nanotechnol. 2012; 7: 743-748.
2. E. Yablonovitch. Statistical ray optics, J. Opt. Soc. Am. 1982; 72: 899.
3. M. Kroll, M. Otto, T. Käsebier, K. Füchsel, R. B. Wehrspohn, E.-B. Kley, A. Tünnermann, and T. Pertsch. Black silicon for solar cell applications, in Proc. SPIE 2012; 8438: 843842.
4. J. Zhao, A. Wang, P. P. Altermatt, S. R. Wenham, and M. A. Green. 24% efficient perl silicon solar cell: Recent improvements in high efficiency silicon cell research, Sol. Energy Mater. Sol. Cells 1996; 41-42: 87-99.
5. K. A. Munzer, K. T. Holdermann, R. E. Schlosser, and S. Sterk. Thin monocrystalline silicon solar cells, IEEE Trans. Electron Devices 1999; 46: 2055.
6. S. H. Zaidi, D. S. Ruby, and J. M. Gee. Characterization of random reactive ion etched-textured silicon solar cells, IEEE Trans. Electron Devices 2001; 48: 1200.
7. M. Otto, M. Kroll, T. Käsebier, R. Salzer, A. Tünnermann, and R. B. Wehrspohn. Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition, Appl. Phys. Lett. 2012; 100: 191603.
8. 3, Appl. Phys. Lett. 2006; 89: 042112.
9. 3, J. Appl. Phys. 2008; 104: 113703.
10. M. Knez, K. Nielsch, and L. Niinistö. Synthesis and surface engineering of complex nanostructures by atomic layer deposition, Adv. Mater. 2007; 19: 3425.
11. 3/Si interfaces prepared by atomic layer deposition, J. Vac. Sci. Technol., A 2012; 30: 04D106.
12. 3 stacks, Appl. Phys. Lett. 2010; 97: 152106.
13. S. Gatz, K. Bothe, J. Mller, T. Dullweber, and R. Brendel. Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells, Energy Procedia 2011; 8: 318-323.
14. A. Richter, S. Glunz, F. Werner, J. Schmidt, and A. Cuevas. Improved quantitative description of Auger recombination in crystalline silicon, Phys. Rev. B 2012; 86: 165202.