Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 11, Issue 3-4, 2014, Pages 738-741

  Badcock, Tom J ^a   Dawson, Phil ^a   Davies, Matthew J ^a,b   Oliver, Rachel A ^b   Kappers, Menno J ^b   Humphreys, Colin J ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Carrier redistribution; InGaN; Photoluminescence time decay; Quantum well; S shape

Indexed keywords

LUMINESCENCE;

CARRIER REDISTRIBUTION; INGAN; INGAN/GAN QUANTUM WELL; LUMINESCENCE INTENSITY; LUMINESCENCE SPECTRUM; PHOTOLUMINESCENCE TIME DECAY; RECOMBINATION ENERGY; S SHAPE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84898548014     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201300481     Document Type: Article

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