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Applied Physics Letters

Volumn 101, Issue 3, 2012, Pages

Magnetoresistance effect in L1 0-MnGa/MgO/CoFeB perpendicular magnetic tunnel junctions with Co interlayer

(8) Ma, Q L a Kubota, T a Mizukami, S a Zhang, X M a Naganuma, H a Oogane, M a Ando, Y a Miyazaki, T a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL EFFECTS; LOW-RESISTANCE STATE; MAGNETIC AND TRANSPORT PROPERTIES; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTANCE EFFECTS; MAGNETORESISTANCE RATIO; MGO BARRIER; ROOM TEMPERATURE;

COBALT COMPOUNDS; GALLIUM ALLOYS; MAGNETORESISTANCE; TRANSPORT PROPERTIES;

MAGNETIC DEVICES;

EID: 84864260235 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4737000 Document Type: Article

Times cited : (69)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.