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1
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0029509348
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Three-dimensional passive circuit technology for ultra-compact MMIC's
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M. Hirano, K. Nishikawa, I. Toyoda, S. Aoyama, S. Sugitani, andK Yamasaki; "Three-dimensional passive circuit technology for ultra-compact MMIC's"; 1995; IEEE Trans. MTT.: 43; 2845.
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Hirano, M.1
Nishikawa, K.2
Toyoda, I.3
Aoyama, S.4
Sugitani, S.5
Yamasaki, K.6
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2
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0030401733
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Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's
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T. Tokumitsu, M. Hirano, and K. Yamasaki; "Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's"; 1996; IEEE GaAs IC Symp.; 151.
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IEEE GaAs IC Symp.
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Tokumitsu, T.1
Hirano, M.2
Yamasaki, K.3
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3
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0030421235
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Folded U-shaped microwire technology for ultra-compact three-dimensional MMIC's
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K. Onodera, M. Hirano, M. Tokumitsu, L Toyoda, K. Nishikawa, andT. Tokumitsu; "Folded U-shaped microwire technology for ultra-compact three-dimensional MMIC's"; 1996; IEEE Trans. MTT: 44; 2347.
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IEEE Trans. MTT
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Onodera, K.1
Hirano, M.2
Tokumitsu, M.3
Toyoda, L.4
Nishikawa, K.5
Tokumitsu, T.6
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4
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0347632755
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Highly-integrated three- dimensional MMIC 20-GHz single chip receiver
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K. Nishikawa, K. Kamogawa, T. Tokumitsu, M. Aikawa, M. Hirano, and S. Sugitani; "Highly-integrated three- dimensional MMIC 20-GHz single chip receiver"; 1996; EuMC; 199.
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EuMC
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Nishikawa, K.1
Kamogawa, K.2
Tokumitsu, T.3
Aikawa, M.4
Hirano, M.5
Sugitani, S.6
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5
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84897494196
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Novel fabrication technology for ultra-compact three-dimensional MMICs
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S. Sugitani, K. Onodera, S. Aoyama, M. Hirano, andK. Yamasaki; "Novel fabrication technology for ultra-compact three-dimensional MMICs"; 1997; ESSDERC; 280.
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ESSDERC
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Sugitani, S.1
Onodera, K.2
Aoyama, S.3
Hirano, M.4
Yamasaki, K.5
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6
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0031370025
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Three- dimensional masterslice MMIC on Si substrate
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L Toyoda, K Nishikawa, T. Tokumitsu, K Kamogawa, C. Yamaguchi, M. Hirano, and M. Aikawa; "Three- dimensional masterslice MMIC on Si substrate"; 1997; IEEE RF IC Sump.; 113.
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IEEE RF IC Sump.
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Toyoda, L.1
Nishikawa, K.2
Tokumitsu, T.3
Kamogawa, K.4
Yamaguchi, C.5
Hirano, M.6
Aikawa, M.7
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7
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0030655062
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A very wide-tuning range 5-GHz-bandSi bipolar VCO using three-dimensional MMIC technology
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K Kamogawa, K Nishikawa, C. Yamaguchi, M. Hirano, L Toyoda, andT. Tokumitsu; "A very wide-tuning range 5-GHz-bandSi bipolar VCO using three-dimensional MMIC technology"; 1997; IEEE MTT-S; 1221.
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IEEE MTT-S
, pp. 1221
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Kamogawa, K.1
Nishikawa, K.2
Yamaguchi, C.3
Hirano, M.4
Toyoda, L.5
Tokumitsu, T.6
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8
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0030080313
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High-frequency characteristics of SrTi03 thin films in the mm-wave band
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K .Ikuta, Y. Umeda, and Y. Ishii; "High-frequency characteristics of SrTi03 thin films in the mm-wave band"; 1996; Jpn. J. Appl. Phys.: 35; 1513.
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Ikuta, K.1
Umeda, Y.2
Ishii, Y.3
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9
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0030655710
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A D-LDD (Double Lightly-Doped Drain) structure H-MESFET for MMIC applications
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Y. Yamane, K. Onodera, T. Nittono, K. Nishimura, K. Yamasaki, and A. Kanda; "A D-LDD (Double Lightly-Doped Drain) structure H-MESFET for MMIC applications"; 1997; IEEE MTT-S; 251.
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IEEE MTT-S
, pp. 251
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Yamane, Y.1
Onodera, K.2
Nittono, T.3
Nishimura, K.4
Yamasaki, K.5
Kanda, A.6
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