Growth of high-quality SnS epitaxial films by H2S flow pulsed laser deposition

Applied Physics Letters

Volumn 104, Issue 7, 2014, Pages

  Ran, Fan Yong ^a   Xiao, Zewen ^a   Hiramatsu, Hidenori ^a   Hosono, Hideo ^a   Kamiya, Toshio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL FILMS; ETCHING; FLOW OF GASES; IV-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; MAGNESIA; OXIDE MINERALS; PULSED LASER DEPOSITION; PULSED LASERS;

DEPOSITED FILMS; DOMAIN BOUNDARY; HIGH GROWTH TEMPERATURES; HIGH QUALITY; HOLE TRANSPORTS; MGO(1 0 0); OPTIMUM CONDITIONS; THEORETICAL CALCULATIONS;

TIN COMPOUNDS;

EID: 84897412003     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4866009     Document Type: Article

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