Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles

Semiconductor Science and Technology

Volumn 29, Issue 4, 2014, Pages

  Yatskiv, R ^a   Grym, J ^a   Brus, V V ^b   Cernohorsky, O ^a   Maryanchuk, P D ^b   Bazioti, C ^c   Dimitrakopulos, G P ^c   Komninou, Ph ^c  

^a INSTITUTE OF PHOTONICS AND ELECTRONICS   (Czech Republic)

^b CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

electrophoretic deposition; hydrogen sensors; Pt nanoparticles; Schottky diodes

Indexed keywords

ELECTRIC PROPERTIES; ELECTROPHORESIS; HYDROGEN; METAL NANOPARTICLES; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; THERMIONIC EMISSION;

CAPACITANCE VOLTAGE CHARACTERISTIC; ELECTRICAL CHARACTERISTIC; ELECTROPHORETIC DEPOSITIONS; HYDROGEN SENSOR; LOW HYDROGEN CONCENTRATION; METAL-SEMICONDUCTOR JUNCTIONS; PT NANOPARTICLES; SCHOTTKY DIODES;

DEPOSITION;

EID: 84896915016     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/29/4/045017     Document Type: Article

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