Recombination processes in Te-doped ZnO microstructures

Physica Status Solidi (B) Basic Research

Volumn 251, Issue 3, 2014, Pages 683-688

  Iribarren, A ^a   Fernandez P ^b   Piqueras, J ^b  

^a UNIVERSITY OF HAVANA   (Cuba)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Cathodoluminescence; Defects; Isovalent doping; Recombination; Te doped ZnO

Indexed keywords

CATHODOLUMINESCENCE; DEFECTS; II-VI SEMICONDUCTORS; MICROSTRUCTURE; OXIDE MINERALS; ZINC OXIDE;

DOPED ZNO; EXPERIMENTAL CONDITIONS; LUMINESCENCE INTENSITY; RECOMBINATION; RECOMBINATION LIFETIME; RECOMBINATION PROCESS; STRAIGHT-FORWARD METHOD; ZNO MICROSTRUCTURES;

TELLURIUM;

EID: 84896725366     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201248600     Document Type: Article

References (24)

1. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dögan, V. Avrutin, S. J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005).
2. A. Iribarren, P. Fernández, and J. Piqueras, Superlattices Microstruct. 43, 600 (2008).
3. A. Iribarren, P. Fernández, and J. Piqueras, J. Mater. Sci. 43, 2844 (2008).
4. J. Grym, P. Fernández, and J. Piqueras, Nanotechnology 16, 931 (2005).
5. L. Armelao, F. Heigl, A. Jürgensen, R. I. R. Blyth, T. Regier, X. T. Zhou, and T. K. Sham, J. Phys. Chem. C 111(28), 10194 (2007).
6. Y. Ortega, P. Fernández, and J. Piqueras, Semicond. Sci. Technol. 26, 085035 (2011).
7. B. Alemán, Y. Ortega, J. A. García, P. Fernández, and J. Piqueras, J. Appl. Phys. 110, 014317 (2011).
8. S. Merita, T. Krämer, B. Mogwitz, B. Franz, A. Polity, and B. K. Meyer, Phys. Status Solidi C 3, 960 (2006).
9. H. L. Porter, J. F. Muth, J. Narayan, J. V. Foreman, and H. O. Everitt, J. Appl. Phys. 100, 123102 (2006).
10. C. C. Lin, S. Y. Chen, S. Y. Cheng, and H. Y. Li, Appl. Phys. Lett. 84, 5040 (2004).
11. G. Y. Huang, C. Y. Wang, and J. T. Wang, J. Phys.: Condens. Matter 21, 195403 (2009).
12. L. Dobaczewski, A. R. Peaker, and K. Bonde Nielsen, J. Appl. Phys. 96, 4689 (2004).
13. J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures (Cambridge University Press, New York, 2003).
14. S. Jursenas, G. Tamulaitis, G. Kurilcik, and A. Zukauskas, Appl. Phys. Lett. 72, 241-243 (1998).
15. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties, third ed. (Springer-Verlag, Berlin, Heidelberg, New York, 2003).
16. A. Iribarren, R. Castro-Rodríguez, F. Caballero-Briones, and J. L. Peña, Appl. Phys. Lett. 74, 2957 (1999).
17. J. T. Randall and M. H. F. Wilkins, Proc. R. Soc. Lond. 184, 366 (1945).
18. Ü. Özgür, A. Teke, C. Liu, S.-J. Cho, H. Morkoc, and H. O. Everitt, Appl. Phys. Lett. 84, 3223-3225 (2004).
19. T. E. Murphy, K. Moazzami, and J. D. Phillips, J. Electron. Mater. 35, 543 (2006).
20. Zh. Fan, P.-Ch. Chang, J. G. Lu, E. C. Walter, R. M. Penner, Ch.-H. Lin, and H. P. Lee, Appl. Phys. Lett. 85, 6128 (2004).
21. A. Muller, P. Bianucci, C. Piermarocchi, M. Fornari, I. C. Robin, R. André, and C. K. Shih, Phys. Rev. B 73, 081306(R) (2006).
22. K. Moazzami, T. E. Murphy, J. D. Phillips, M. C.-K. Cheung, and A. N. Cartwright, Semicond. Sci. Technol. 21, 717 (2006).
23. F. Tuomisto, V. Ranki, K. Saarinen, and D. C. Look, Phys. Rev. Lett. 91, 205502 (2003).
24. A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, Phys. Rev. B 61, 15019 (2000).