Design and growth of III-V on Si microwire array tandem solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2013, Pages 3397-3401

  Chen, Christopher T ^a   Turner Evans, Daniel B ^a   Emmer, Hal ^a   Aloni, Shaul ^b   Atwater, Harry A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Epitaxial layers; III V semiconductor materials; Semiconductor device modeling; Silicon

Indexed keywords

CRYSTALLOGRAPHY; EPITAXIAL GROWTH; EPITAXIAL LAYERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MODELS; SILICON; SILICON WAFERS; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

CRYSTALLINE QUALITY; DEVICE PERFORMANCE; LAYER MORPHOLOGY; OPTICAL GENERATION; SOLAR TECHNOLOGY; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS; TANDEM SOLAR CELLS;

GALLIUM ALLOYS;

EID: 84896479946     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2013.6745178     Document Type: Conference Paper

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