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Applied Physics Letters

Volumn 97, Issue 22, 2010, Pages

Conformal GaP layers on Si wire arrays for solar energy applications

(5) Tamboli, Adele C a Malhotra, Manav a Kimball, Gregory M a Turner Evans, Daniel B a Atwater, Harry A a

a California Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLOROSILANES; CRYSTALLINE QUALITY; HALL MEASUREMENTS; HIGH ELECTRON MOBILITY; METALORGANIC CHEMICAL VAPOR DEPOSITION; N-TYPE DOPING; OPTICAL EMISSIONS; P-N HOMOJUNCTIONS; PHOTOVOLTAIC RESPONSE; SI MICROWIRES; SI WIRE ARRAY; SILICON WIRES; SOLAR ENERGY APPLICATIONS; WIRE ARRAYS;

ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPEN CIRCUIT VOLTAGE; ORGANIC CHEMICALS; SOLAR ENERGY; TRANSMISSION ELECTRON MICROSCOPY; WIRE; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78650638986 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3522895 Document Type: Article

Times cited : (13)

References (17)

1
- 20544449654
- Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells
- DOI 10.1063/1.1901835, 114302
- B. M. Kayes, H. A. Atwater, and N. S. Lewis, J. Appl. Phys. JAPIAU 0021-8979 97, 114302 (2005). 10.1063/1.1901835 (Pubitemid 40844795)
- (2005) Journal of Applied Physics , vol.97 , Issue.11 , pp. 1-11
- Kayes, B.M.¹ Atwater, H.A.² Lewis, N.S.³

2
- 77249164255
- NMAACR 1476-1122,. 10.1038/nmat2727
- M. D. Kelzenberg, S. W. Boettcher, J. A. Petykiewicz, D. B. Turner-Evans, M. C. Putnam, E. L. Warren, J. M. Spurgeon, R. M. Briggs, N. S. Lewis, and H. A. Atwater, Nature Mater. NMAACR 1476-1122 9, 239 (2010). 10.1038/nmat2727
- (2010) Nature Mater. , vol.9 , pp. 239
- Kelzenberg, M.D.¹ Boettcher, S.W.² Petykiewicz, J.A.³ Turner-Evans, D.B.⁴ Putnam, M.C.⁵ Warren, E.L.⁶ Spurgeon, J.M.⁷ Briggs, R.M.⁸ Lewis, N.S.⁹ Atwater, H.A.¹⁰

3
- 34548497849
- Growth of vertically aligned Si wire arrays over large areas (>1 cm2) with Au and Cu catalysts
- DOI 10.1063/1.2779236
- B. M. Kayes, M. A. Filler, M. C. Putnam, M. D. Kelzenberg, N. S. Lewis, and H. A. Atwater, Appl. Phys. Lett. APPLAB 0003-6951 91, 103110 (2007). 10.1063/1.2779236 (Pubitemid 47379063)
- (2007) Applied Physics Letters , vol.91 , Issue.10 , pp. 103110
- Kayes, B.M.¹ Filler, M.A.² Putnam, M.C.³ Kelzenberg, M.D.⁴ Lewis, N.S.⁵ Atwater, H.A.⁶

4
- 77956283603
- EESNBY 1754-5692,. 10.1039/c0ee00014k
- M. C. Putnam, S. W. Boettcher, M. D. Kelzenberg, D. B. Turner-Evans, J. M. Spurgeon, E. L. Warren, R. M. Briggs, N. S. Lewis, and H. A. Atwater, Energy Environ. Sci. EESNBY 1754-5692 3, 1037 (2010). 10.1039/c0ee00014k
- (2010) Energy Environ. Sci. , vol.3 , pp. 1037
- Putnam, M.C.¹ Boettcher, S.W.² Kelzenberg, M.D.³ Turner-Evans, D.B.⁴ Spurgeon, J.M.⁵ Warren, E.L.⁶ Briggs, R.M.⁷ Lewis, N.S.⁸ Atwater, H.A.⁹

5
- 0036684778
- SSTEET 0268-1242,. 10.1088/0268-1242/17/8/305
- J. F. Geisz and D. J. Friedman, Semicond. Sci. Technol. SSTEET 0268-1242 17, 769 (2002). 10.1088/0268-1242/17/8/305
- (2002) Semicond. Sci. Technol. , vol.17 , pp. 769
- Geisz, J.F.¹ Friedman, D.J.²

6
- 74249091524
- SCIEAS 0036-8075,. 10.1126/science.1180783
- S. W. Boettcher, J. M. Spurgeon, M. C. Putnam, E. L. Warren, D. B. Turner-Evans, M. D. Kelzenberg, J. R. Maiolo, H. A. Atwater, and N. S. Lewis, Science SCIEAS 0036-8075 327, 185 (2010). 10.1126/science.1180783
- (2010) Science , vol.327 , pp. 185
- Boettcher, S.W.¹ Spurgeon, J.M.² Putnam, M.C.³ Warren, E.L.⁴ Turner-Evans, D.B.⁵ Kelzenberg, M.D.⁶ Maiolo, J.R.⁷ Atwater, H.A.⁸ Lewis, N.S.⁹

7
- 46749126079
- JCRGAE 0022-0248,. 10.1016/j.jcrysgro.2008.05.003
- V. K. Dixit, T. Ganguli, T. K. Sharma, S. D. Singh, R. Kumar, S. Porwal, P. Tiwari, A. Ingale, and S. M. Oak, J. Cryst. Growth JCRGAE 0022-0248 310, 3428 (2008). 10.1016/j.jcrysgro.2008.05.003
- (2008) J. Cryst. Growth , vol.310 , pp. 3428
- Dixit, V.K.¹ Ganguli, T.² Sharma, T.K.³ Singh, S.D.⁴ Kumar, R.⁵ Porwal, S.⁶ Tiwari, P.⁷ Ingale, A.⁸ Oak, S.M.⁹

8
- 70350431281
- APPLAB 0003-6951,. 10.1063/1.3247969
- M. C. Putnam, D. B. Turner-Evans, M. D. Kelzenberg, S. W. Boettcher, N. S. Lewis, and H. A. Atwater, Appl. Phys. Lett. APPLAB 0003-6951 95, 163116 (2009). 10.1063/1.3247969
- (2009) Appl. Phys. Lett. , vol.95 , pp. 163116
- Putnam, M.C.¹ Turner-Evans, D.B.² Kelzenberg, M.D.³ Boettcher, S.W.⁴ Lewis, N.S.⁵ Atwater, H.A.⁶

9
- 0040845242
- JAPIAU 0021-8979,. 10.1063/1.1703082
- M. Gershenzon, F. A. Trumbore, R. M. Mikulyak, and M. Kowalchik, J. Appl. Phys. JAPIAU 0021-8979 36, 1528 (1965). 10.1063/1.1703082
- (1965) J. Appl. Phys. , vol.36 , pp. 1528
- Gershenzon, M.¹ Trumbore, F.A.² Mikulyak, R.M.³ Kowalchik, M.⁴

10
- 33745935969
- Studies on MOVPE growth of GaP epitaxial layer on Si(0 0 1) substrate and effects of annealing
- DOI 10.1016/j.jcrysgro.2006.03.060, PII S0022024806004428
- V. K. Dixit, T. Ganguli, T. K. Sharma, R. Kumar, S. Porwal, V. Shukla, A. Ingale, P. Tiwari, and A. K. Nath, J. Cryst. Growth JCRGAE 0022-0248 293, 5 (2006). 10.1016/j.jcrysgro.2006.03.060 (Pubitemid 44061838)
- (2006) Journal of Crystal Growth , vol.293 , Issue.1 , pp. 5-13
- Dixit, V.K.¹ Ganguli, T.² Sharma, T.K.³ Kumar, R.⁴ Porwal, S.⁵ Shukla, V.⁶ Ingale, A.⁷ Tiwari, P.⁸ Nath, A.K.⁹

11
- 0038870119
- JAPIAU 0021-8979,. 10.1063/1.1656027
- P. J. Dean, C. J. Frosch, and C. H. Henry, J. Appl. Phys. JAPIAU 0021-8979 39, 5631 (1968). 10.1063/1.1656027
- (1968) J. Appl. Phys. , vol.39 , pp. 5631
- Dean, P.J.¹ Frosch, C.J.² Henry, C.H.³

12
- 0020750832
- Electron and hole carrier mobilities for liquid phase epitaxially grown GaP in the temperature range 200-550 K
- DOI 10.1063/1.332362
- Y. C. Kao and O. Eknoyan, J. Appl. Phys. JAPIAU 0021-8979 54, 2468 (1983). 10.1063/1.332362 (Pubitemid 13562991)
- (1983) Journal of Applied Physics , vol.54 , Issue.5 , pp. 2468-2471
- Kao, Y.C.¹ Eknoyan, O.²

13
- 0012535926
- JAPIAU 0021-8979,. 10.1063/1.1658106
- H. C. Casey, Jr., F. Ermanis, and K. B. Wolfstirn, J. Appl. Phys. JAPIAU 0021-8979 40, 2945 (1969). 10.1063/1.1658106
- (1969) J. Appl. Phys. , vol.40 , pp. 2945
- Casey Jr., H.C.¹ Ermanis, F.² Wolfstirn, K.B.³

14
- 0004005306
- 3rd ed. (Wiley, New Jersey)
- S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, New Jersey, 2007), pp. 725-730.
- (2007) Physics of Semiconductor Devices , pp. 725-730
- Sze, S.M.¹ Ng, K.K.²

15
- 33847596250
- PLRBAQ 0556-2805,. 10.1103/PhysRevB.27.985
- D. E. Aspnes and A. A. Studna, Phys. Rev. B PLRBAQ 0556-2805 27, 985 (1983). 10.1103/PhysRevB.27.985
- (1983) Phys. Rev. B , vol.27 , pp. 985
- Aspnes, D.E.¹ Studna, A.A.²

16
- 0001244565
- APPLAB 0003-6951,. 10.1063/1.91643
- H. Kroemer, K. J. Polasko, and S. C. Wright, Appl. Phys. Lett. APPLAB 0003-6951 36, 763 (1980). 10.1063/1.91643
- (1980) Appl. Phys. Lett. , vol.36 , pp. 763
- Kroemer, H.¹ Polasko, K.J.² Wright, S.C.³

17
- 0022669935
- JCRGAE 0022-0248,. 10.1016/0022-0248(87)90391-5
- H. Kroemer, J. Cryst. Growth JCRGAE 0022-0248 81, 193 (1987). 10.1016/0022-0248(87)90391-5
- (1987) J. Cryst. Growth , vol.81 , pp. 193
- Kroemer, H.¹

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