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Applied Surface Science

Volumn 295, Issue , 2014, Pages 194-197

About the key factors driving the resistivity of AuO x thin films grown by reactive magnetron sputtering

(5) Dolique, V a Thomann, A L a Millon, E a Petit, A a Brault, P a

a UNIVERSITÉ D'ORLÉANS (France)

Author keywords

Electrical conductivity; Gold oxide; Oxygen content; Reactive magnetron sputtering deposition; Thin film growth

Indexed keywords

ELECTRIC CONDUCTIVITY; FILM GROWTH; GOLD COMPOUNDS; GOLD DEPOSITS; MAGNETRON SPUTTERING; NUCLEAR REACTIONS; OXYGEN; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ELECTRICAL CONDUCTIVITY; GOLD OXIDE; NUCLEAR REACTION ANALYSIS; OXYGEN CONCENTRATIONS; OXYGEN CONTENT; REACTIVE MAGNETRON SPUTTERING; REACTIVE MAGNETRON SPUTTERING DEPOSITION; SILICON SUBSTRATES;

THIN FILMS;

EID: 84894079252 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2014.01.026 Document Type: Article

Times cited : (18)

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